Skip to main content
SpringerLink
Log in

Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Molecular beam epitaxy growth of multilayer In x Ga1-x As/GaAs(001) structures with low indium content (x = 0.20–0.35) was studied by X-ray diffraction and photoluminescence in order to understand the initial stage of strain-driven island formation. The structural properties of these superlattices were investigated using reciprocal space maps, which were obtained around the symmetric 004 and asymmetric 113 and 224 Bragg diffraction, and ω/2θ scans with a high-resolution diffractometer in the triple axis configuration. Using the information obtained from the reciprocal space maps, the 004 ω/2θ scans were simulated by dynamical diffraction theory and the in-plane strain in the dot lattice was determined. We determined the degree of vertical correlation for the dot position (“stacking”) and lateral composition modulation period (LCM) (lateral ordering of the dots). It is shown that initial stage formation of nanoislands is accompanied by LCM only for [110] direction in the plane with␣a period of about 50 to 60 nm, which is responsible for the formation of a quantum wire like structure. The role of In x Ga1-x As thickness and lateral composition modulation in the formation of quantum dots in strained In x Ga1-x As/GaAs structures is discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P. Bhattacharya, S. Ghosh and A.D. Stiff-Roberts: Annu. Rev. Mater. Res. 34, 1 (2004).

    Article  CAS  Google Scholar 

  2. V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov and N. A. Maleev: Quantum Dot Lasers (N.Y., Oxford University Press 2003).

    Google Scholar 

  3. D. Bimberg, M. Grundmann and N. N. Ledensov, Quantum Dot Heterostructures (Wiley & Sons, 1999).

  4. P.B. Joyce, T. J. Krzyzewski, G.R. Bell, B.A. Joyce and T.S. Jones: Phys. Rev. B 58, R15981 (1998).

    Article  CAS  Google Scholar 

  5. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg and R. S. Williams: Science 279, 353 (1998).

    Article  CAS  Google Scholar 

  6. M. Henini, Nanoscale Res. Lett. 1, 32 (2006).

  7. M. Ya. Valakh, V.V. Strelchuk, A.F. Kolomys, Yu.I. Mazur, Zh.M. Wang, M. Xiao and G.J. Salamo: Semiconductors 39, 127 (2005).

    Article  CAS  Google Scholar 

  8. N. Ikoma and S. Ohkouchi: Jpn. J. Appl. Phys. 34, L724 (1995).

    Article  CAS  Google Scholar 

  9. N. Grandjean, J. Massies and O. Tottereau: Phys. Rev. B 55, R10189 (1997).

    Article  CAS  Google Scholar 

  10. B. Shin, B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya: Appl. Phys. Lett. 81, 1423 (2002).

    Article  CAS  Google Scholar 

  11. Y.H. Chen, X.L. Ye, and Z.G. Wang, Nanoscale Res. Lett. 1, 79 (2006).

    Google Scholar 

  12. R.D. Twesten, D.M. Follstaedt, S.R. Lee, E.D. Jones, J.L. Reno, J.M. Millunchick, A.G. Norman, S.P. Ahrenkiel, and A. Mascarenhas: Phys. Rev. B 60, 13619 (1999).

    Article  CAS  Google Scholar 

  13. R. Heitz, T. R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen and A. Madhukar: Phys. Rev. Lett. 78, 4071 (1997).

    Article  CAS  Google Scholar 

  14. P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, J.P. Reithmaier, and A. Forchel: Appl. Phys. Lett. 89, 061902 (2006).

    Article  Google Scholar 

  15. V.V. Strelchuk, P.M. Lytvyn, A.F. Kolomys, M.Ya. Valakh, Yu.I. Mazur, Zh.M. Wang, and G.J. Salamo: Semiconductors 41, 73 (2007).

    Article  CAS  Google Scholar 

  16. Yu.I. Mazur, Zh.M. Wang, G.J. Salamo, V.V. Strelchuk, V.P. Kladko, V.F. Machulin, M.Ya. Valakh and M.O. Manasreh: J. Appl. Phys. 99, 023517 (2006).

    Article  Google Scholar 

  17. A. Michon, I. Sagnes, G. Patriarche, G. Beaudoin, M.N. Mèrat-Combes, and G. Saint-Girons: Phys. Rev. B 73, 165321 (2006).

    Article  Google Scholar 

  18. J. Tersoff and R.M. Tromp: Phys. Rev. Lett. 70, 2782 (1993).

    Article  CAS  Google Scholar 

  19. C. Priester and M. Lannoo: Phys. Rev. Lett. 75, 93 (1995).

    Article  CAS  Google Scholar 

  20. F.M. Ross, R.M. Tromp and M.C. Reuter: Science 286, 1931 (1999).

    Article  CAS  Google Scholar 

  21. S.O. Cho, Zh.M. Wang, and G.J. Salamo: Appl. Phys. Lett. 86, 113106 (2005).

    Article  Google Scholar 

  22. O. Kirfel, E. Muller, D. Grutzmacher, K. Kern, Physica E 16, 602 (2003).

    Article  CAS  Google Scholar 

  23. M. Schmidbauer: X-Ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures (Springer Tracts in Modern Physics, Vol. 199 (Springer, Berlin rg) p. 204 (2004)).

    Google Scholar 

  24. V. V. Strelchuk, V. P. Kladko, O. M. Yefanov, O. I. Gudymenko, M. Ya. Valakh, A. F. Kolomys, Yu. I. Mazur, Zh. M. Wang and G. J. Salamo: Semiconductor Phys., Quantum Electronics & Optoelectronics 8, 35 (2005).

    Google Scholar 

  25. D. Grigoriev, M. Schmidbauer, P. Schäfer, S. Besedin, Yu.I. Mazur, Zh.M. Wang, G.J. Salamo and R. Köhler: J. Phys. D: Appl. Phys. 38, A154 (2005).

    Article  CAS  Google Scholar 

  26. E. Penev, P. Kratzer and M. Scheffler: Phys. Rev. B 64, 085401 (2001).

    Article  Google Scholar 

  27. P. Sutter and M. G. Lagally: Phys. Rev. Lett. 84, 4637 (2000).

    Article  CAS  Google Scholar 

  28. A. Gustafsson, M. -E. Pistol, L. Montelius and L. Samuelson: J. Appl. Phys. 84, 1715 (1998).

    Article  CAS  Google Scholar 

  29. Yung-Hui Yeh and Joseph Ya-min Lee: J. Appl. Phys. 81, 6921 (1997).

    Article  CAS  Google Scholar 

  30. G Saint-Girons and I. Sagnes: J. Appl. Phys. 91, 10115 (2002).

    Article  CAS  Google Scholar 

  31. A. A. Darhuber, P. Schittenhelm, V. Holy, J. Stangl, G. Bauer, and G. Abstreiter: Phys. Rev. B 55, 15652 (1997).

    Article  CAS  Google Scholar 

  32. Zh.M. Wang, Yu.I. Mazur, G.J. Salamo, P.M. Lytvyn, V.V. Strelchuk and M.Ya. Valakh: Appl. Phys. Lett. 84, 4681 (2004).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Prospekt Nauki 45, Kyiv, 03028, Ukraine

    V.P. Kladko, V.V. Strelchuk, A.F. Kolomys & M.V. Slobodian

  2. Department of Physics, University of Arkansas, Fayetteville, Arkansas, 72701, USA

    Yu.I. Mazur, Zh.M. Wang, Vas. P. Kunets & G.J. Salamo

Authors
  1. V.P. Kladko
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V.V. Strelchuk
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A.F. Kolomys
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M.V. Slobodian
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Yu.I. Mazur
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Zh.M. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Vas. P. Kunets
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. G.J. Salamo
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Yu.I. Mazur.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kladko, V., Strelchuk, V., Kolomys, A. et al. Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content. J. Electron. Mater. 36, 1555–1561 (2007). https://doi.org/10.1007/s11664-007-0258-6

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-007-0258-6

Keywords

Search

Navigation