Skip to main content
SpringerLink
Log in

Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

This paper reports results of a study of non-alloyed ohmic contacts on Si-implanted AlGaN/GaN heterostructures, obtained from current–voltage characteristics of transfer-length method (TLM) test structures. It is shown that the measured contact resistance from the Ti/Au/Ni metal contacts, deposited on Si-implanted regions, to the two-dimensional electron gas channel at the AlGaN/GaN heterointerface of the non-implanted region, is formed by three different components: (i) contact resistance between the metal␣and the semiconductor (0.60 ± 0.16 Ω mm), (ii) resistance of the implanted region (0.62 ± 0.03 Ω mm) and (iii) an additional resistance (0.72 ±  0.24 Ω mm) giving a total value of 1.9 ± 0.3 Ω mm. The specific ohmic contact resistance was determined to be (2.4 ± 0.5) × 10−5 Ω cm2.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S.K. Gandhi, VLSI Fabrication Principles, (John Wiley and Sons, Inc., New York, 1983), pp. 299–369

    Google Scholar 

  2. M.C. Chen, J.K. Sheu, M.L. Lee, C.J. Kao, C.J. Tun, G.C. Chi, J. Electrochem. Soc. 153, G799 (2006)

    Article  CAS  Google Scholar 

  3. X.A. Cao, J.R. LaRoche, F. Ren, S.J. Pearton, J.R. Lothian, R.K. Singh, R.G. Wilson, H.J. Guo, S.J. Pennycook, Solid State Electron. 43, 1235 (1999)

    Article  CAS  Google Scholar 

  4. J.C. Zolper, R.J. Shul, A.G. Baca, R.G. Wilson, S.J. Pearton, R.A. Stall, Appl. Phys. Lett. 68, 2273 (1996)

    Article  CAS  Google Scholar 

  5. J. Burm, K. Chu, W.A. Davis, W.J. Schaff, L.F. Eastman, T.J. Eustis, Appl. Phys. Lett. 70, 464 (1997)

    Article  CAS  Google Scholar 

  6. H. Yu, L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, S.P. Denbaars, J.S. Speck, U.K. Mishra, Appl. Phys. Lett. 85, 5254 (2004)

    Article  CAS  Google Scholar 

  7. F. Recht, L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, J.S. Speck, U.K. Mishra, IEEE Electr. Device L. 27, 205 (2006)

    Article  CAS  Google Scholar 

  8. S.S. Cohen and G.Sh. Gildenblat, VLSI Electronics Microstructure Science - Metal-Semiconductor Contacts and Devices, ed. N. G. Einspruch (Academic Press, Inc., London, 1986) vol. 13, Chap. 4.3, p. 97

  9. J.F. Ziegler, J.P. Biersack, http://www.srim.org

  10. Y. Furuhashi, S. Yoshida, D. Ozaki, T. Inada, Nucl. Instrum. Meth. B 242, 633 (2006)

    Article  CAS  Google Scholar 

  11. F. Recht, L. McCarthy, S. Keller, C. Poblenz, A. Corrion, J.S. Speck, S.P. DenBaars, and U.K. Mishra, submitted to IEEE Electr. Device L

Download references

Acknowledgements

This work was supported in part by the Australian Research Council Discovery Project under Grant DP0559840 and by grants from the Office of Naval Research and the Defense Advanced Research Projects Agency.

Author information

Authors and Affiliations

  1. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy, Crawley, WA, 6009, Australia

    M. Kocan, G.A. Umana-Membreno, J.S. Chung, G. Parish & B.D. Nener

  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA

    F. Recht, L. McCarthy, S. Keller & U.K. Mishra

Authors
  1. M. Kocan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G.A. Umana-Membreno
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J.S. Chung
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. F. Recht
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. L. McCarthy
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. Keller
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. U.K. Mishra
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. G. Parish
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. B.D. Nener
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. Kocan.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kocan, M., Umana-Membreno, G., Chung, J. et al. Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors. J. Electron. Mater. 36, 1156–1159 (2007). https://doi.org/10.1007/s11664-007-0184-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-007-0184-7

Keywords

Search

Navigation