Abstract
Post-grown annealing of (211) (CdZn)Te substrates has been used for elimination of Te and Cd inclusions with the objective of improving the yield of inclusion-free substrates for MBE growth of (HgCd)Te. Different annealing temperatures and Cd/Te overpressures were used to find the optimum annealing conditions. Te inclusions were significantly reduced by Cd-rich annealing at temperatures higher than 660°C, together with increasing the infrared transmittance at 10 µm to above 60%. Good crystalline quality was preserved after the annealing. Te-rich annealing at 700°C was found to be the optimum method for elimination of most of the Cd inclusions; infrared transmittance at 10 µm was suppressed by the annealing, however. Final Cd-rich annealing is recommended for infrared transmittance improvement.
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Acknowledgement
This work is a part of the research plan MSMT 0021620834 financed by the Ministry of Education of the Czech Republic and partly supported by the Grant Agency of Charles University under contract No 215/2006 B-FYZ and by the Grant Agency of the Czech Republic under contract No 102/05/2095.
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Belas, E., Bugár, M., Grill, R. et al. Elimination of Inclusions in (CdZn)Te Substrates by Post-grown Annealing. J. Electron. Mater. 36, 1025–1030 (2007). https://doi.org/10.1007/s11664-007-0167-8
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DOI: https://doi.org/10.1007/s11664-007-0167-8