Skip to main content
SpringerLink
Log in

A Study of Deep Defect Levels in Semi-Insulating SiC Using Optical Admittance Spectroscopy

  • Regular Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Optical admittance spectroscopy (OAS), supported by electron paramagnetic resonance (EPR) measurements, is used to identify the controversial vanadium acceptor levels in vanadium-doped semi-insulating (SI) 4H-SiC and 6H-SiC. The V3+/4+ levels for the cubic site are likely located at E c − 0.67 ± 0.02 eV and E c − 0.70 ± 0.02 eV in 6H-SiC and E c − 0.75 ± 0.02 eV in 4H-SiC. A peak at 0.87 ± 0.02 eV in the 6H-SiC is tentatively assigned to the same transition at the hexagonal site and the associated transition in 4H-SiC is thought to occur near 0.94 eV. All assignments are supported by the observation of V3+ in the EPR spectrum.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. Schneider, H.D. Műller, K. Maier, W. Wilkening, F. Fuchs, A. Dörnen, S. Leibenzeder, R. Stein, Appl. Phys. Lett. 56, 1184 (1990).

    Article  CAS  Google Scholar 

  2. D. Prezzi, T.A.G. Eberlein, J.S. Filhol, R. Jones, M.J. Shaw, P.R. Briddon, S. Öberg, Phys. Rev. B 69, 193202 (2004).

    Article  CAS  Google Scholar 

  3. K. Maier, J. Schneider, W. Wilkening, S. Leibenzeder, R. Stein, Mater. Sci. Eng. B11, 27 (1992).

    Article  CAS  Google Scholar 

  4. A.O. Evwaraye, S.R. Smith, W.C. Mitchel, J. Appl. Phys. 79, 7726 (1996).

    Article  CAS  Google Scholar 

  5. A.O. Evwaraye, S.R. Smith, W.C. Mitchel, J. Appl. Phys. 79, 253 (1996).

    Article  CAS  Google Scholar 

  6. V. Lauer, G. Bremond, A. Souifi, G. Guillot, K. Chourou, R. Madar, B. Clerjaud, Mater. Sci. Forum 338, 635 (2000).

    Article  Google Scholar 

  7. N. Achtziger, J. Grillenberger, W. Witthuhn, Appl. Phys. A 65, 329 (1997).

    Article  CAS  Google Scholar 

  8. J.R. Jenny, J. Skowronski, W.C. Mitchel, H.M. Hobgood, R.C. Glass, G. Augustine, R.H. Hopkins, Appl. Phys. Lett. 68, 1963 (1996).

    Article  CAS  Google Scholar 

  9. S.R. Smith, A.O. Evwaraye, W.C. Mitchel, Mater. Res. Soc. Symp. Proc. 742, K5.16.1 (2003).

    Google Scholar 

  10. J.A. Weil, J.R. Bolton, J.E. Wertz, Electron Paramagnetic Resonance (New York: John Wiley & Sons, 1994), pp. 23–26

    Google Scholar 

  11. J.W. Orton, Electron Paramagnetic Resonance (London: Pittman Press, 1968), pp. 23–26

    Google Scholar 

  12. N. Achtziger, W. Witthuhn, Appl. Phys. Lett. 71, 110 (1997).

    Article  CAS  Google Scholar 

  13. J.M. Langer, H. Heinrich, Phys. Rev. Lett. 55, 1414 (1985).

    Article  CAS  Google Scholar 

  14. S. Bai, R.P. Devaty, W.J. Choyke, U. Kaiser, G. Wagner, M.F. MacMillan, Appl. Phys. Lett. 83, 3171 (2003).

    Article  CAS  Google Scholar 

  15. V.V. Afanas’ev, M. Bassler, G. Pensl, M.J. Schulz, E. Stein von Kamienski, J. Appl. Phys. 79, 3108 (1996).

    Article  CAS  Google Scholar 

  16. F. Bechstedt, P. Käckell, A. Zywietz, K. Karch, A. Adolph, K. Tenelsen, J. Furthműller, Phys. Status Solidi (b) 202, 35 (1997).

    Article  CAS  Google Scholar 

  17. A.O. Evwaraye, S.R. Smith, W.C. Mitchel, Appl. Phys. Lett. 67, 3319 (1995).

    Article  CAS  Google Scholar 

  18. T. Dalibor, G. Pensl, N. Nordell, A. Schoner, Phys. Rev. B 55, 13618 (1997).

    Article  CAS  Google Scholar 

  19. M.E. Zvanut, V.V. Konovalov, Haiyan Wang, W.C. Mitchel, W.D. Mitchell, G. Landis, J. Appl. Phys. 96, 5484 (2004).

    Article  CAS  Google Scholar 

Download references

Acknowledgments

This work is supported by the National Science Foundation and by Dr. Colin Wood, Office of Naval Research. Dr. W. Mitchel contributed the samples and Hall measurement data, and the ITO deposition was provided by G. Landis, Wright Patterson Air Force Base, AFRL. The authors thank Mr. S. Smith and Dr. V. Konovalov for their assistance with the initial OAS measurement.

Author information

Author notes

  1. Wonwoo Lee

    Present address: Carbon Nanotubes and Nanocomposite Research Center, Sungkyunkwan University, 300 Chunchun-Dong, Jangan-Gu, Suwon, Gyeonggi-Do, 440-746, South Korea

Authors and Affiliations

  1. Department of Physics, University of Alabama at Birmingham, Birmingham, AL, 35294-1170, USA

    Wonwoo Lee & M. E. Zvanut

Authors
  1. Wonwoo Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. E. Zvanut
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Wonwoo Lee.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lee, W., Zvanut, M.E. A Study of Deep Defect Levels in Semi-Insulating SiC Using Optical Admittance Spectroscopy. J. Electron. Mater. 36, 623–628 (2007). https://doi.org/10.1007/s11664-007-0100-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-007-0100-1

Keywords

Search

Navigation