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Mapping of zinc content in Cd1−xZnxTe by optical methods

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Abstract

The paper compares different methods of optical mapping of zinc concentration x in Cd1−xZnxTe wafers for low x values and reviews the procedures for deriving band-gap energy from optical spectra (photoluminescence, absorption and reflectance) at different temperatures (liquid helium, liquid nitrogen and room temperature). Experimental errors of these techniques are compared and the segregation coefficient of zinc is calculated.

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Authors and Affiliations

  1. Faculty of Mathematics and Physics, Institute of Physics, Charles University, Ke Karlovu 5, CZ-121 16, Prague 2, Czechia

    P. Horodyský, J. Franc, R. Grill, P. Hlídek, P. Moravec, J. Bok & P. Höschl

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  1. P. Horodyský
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  2. J. Franc
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  3. R. Grill
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  4. P. Hlídek
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  5. P. Moravec
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  6. J. Bok
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  7. P. Höschl
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Horodyský, P., Franc, J., Grill, R. et al. Mapping of zinc content in Cd1−xZnxTe by optical methods. J. Electron. Mater. 35, 1491–1494 (2006). https://doi.org/10.1007/s11664-006-0290-y

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  • DOI: https://doi.org/10.1007/s11664-006-0290-y

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