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Interfacial Chemistry of InP/GaAs Bonded Pairs

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The interfacial chemistry of InP/GaAs direct bonding with either 5% HF in water or HF:ethanol (1:9) chemical pretreatments was investigated. Multiple internal transmission-Fourier transform infrared spectroscopy (MIT-FTIR) and atomic force microscopy (AFM) were used to probe the bonding interface. The bond strength was measured as a function of annealing conditions and prebonding chemical treatment. The HF-based pretreatments remove the initial native oxide, leaving an interfacial layer of either water or ethanol. The initial room-temperature bond strength is primarily determined by the strength of hydrogen bonding, which, in turn, is a function of the prebonding treatment. The removal of interfacial water and ethanol, and with the subsequent formation of the oxide layer, leads to an increased bond strength. For ethanol-based HF treatments, ethanol appears to react with the underlying interfacial oxide layer through a complex interaction with the absorbed water. After annealing, the bond strength for all prebonding preparations can reach a high value, comparable to the fracture strength of the InP. The oxide composition after thermal annealing shifts from In2O3 to the eventual thermodynamic equilibrium product, InPO4.

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Acknowledgements

The University of Wisconsin-Madison gratefully acknowledges support from the ARO MURI W911NF-05-1-0262 (Dr. John Prater) and facilities support through the NSF-MRSEC on Nanostructured Materials and Interfaces.

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  1. Materials Science Program, University of Wisconsin-Madison, Madison, WI, 53706, USA

    N. Liu & T.F. Kuech

  2. Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA

    T.F. Kuech

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Liu, N., Kuech, T. Interfacial Chemistry of InP/GaAs Bonded Pairs. J. Electron. Mater. 36, 179–190 (2007). https://doi.org/10.1007/s11664-006-0077-1

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