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Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System

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MgCaO offers promise as a gate dielectric for GaN-based metal-oxide-semiconductor (MOS) transistors, particularly in combination with environmentally stable capping layers such as Sc2O3. X-ray photoelectron spectroscopy (XPS) was used to measure the energy discontinuity in the valence band (ΔE v ) of Mg0.5Ca0.5O/GaN heterostructures in which the MgCaO was grown by rf plasma-assisted molecular beam epitaxy on top of thick GaN templates on sapphire substrates. A value of ΔE v = 0.65 eV ± 0.10 eV was obtained by using the Ga 3d energy level as a reference. Given the bandgap of 7.45 eV for the MgCaO, we infer a conduction band offset ΔE C of 3.36 eV in the Mg0.5Ca0.5O system.

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Acknowledgements

The authors gratefully acknowledge the support from ONR Contract No. N00014-98-1-0204 (P. Maki), AFOSR Contract No. F49602-02-1-0366 (G.L. Witt), the Army Research Office under Grant␣No. DAAD19-01-1-0603, the Army Research Laboratory, the National Science Foundation (Grant No. DMR 0400416, Dr. L. Hess), and the Air Force Office of Scientific Research under Grant No.␣F49620-03-1-0370 for this work. The authors also acknowledge the Major Analytical Instrumentation Center at UF for providing the materials characterization instruments.

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Authors and Affiliations

  1. Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA

    J.-J. Chen & F. Ren

  2. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    M. Hlad, A.P. Gerger, B.P. Gila, C.R. Abernathy & S.J. Pearton

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  1. J.-J. Chen
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Correspondence to S.J. Pearton.

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Chen, JJ., Hlad, M., Gerger, A. et al. Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System. J. Electron. Mater. 36, 368–372 (2007). https://doi.org/10.1007/s11664-006-0037-9

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