Abstract
Micropipes are considered to be one of the most serious defects in silicon carbide (SiC) wafers affecting device yield. Developing a method to count and map micropipes accurately has been a challenging task. In this study, the different etching behavior of conductive and semi-insulating wafers in molten potassium oxide (KOH) is compared. Micropipes and closed-core screw dislocations exhibit different morphology after etching and can be easily distinguished with a polishing process. Based on a new sample preparation procedure and a digital imaging technique, a novel method of efficiently and reliably mapping and counting micropipes in both conductive and semi-insulating SiC wafers is developed.
Similar content being viewed by others
References
P.G. Neudeck, W. Huang, M. Dudley, IEEE Trans. Electron Dev. 46, 478 (1999).
F.C. Frank, Acta Cryst. 4, 497 (1951).
J.R. Jenny, D.P. Malta, M.R. Calus, St.G. Muller, A.R. Powell, V.F. Tsvetkov, H.McD. Hobgood, R.C. Glass, and C.H. Carter, Jr., Mater. Sci. Forum 457–460, 35 (2004).
A.P. Powell, R.T. Leonard, M.F. Brady, St.G. Muller, V.F. Tsvetkov, R. Trussell, J.J. Sumakeris, H.McD. Hobgood, A.A. Burk, R.C. Glass, and C.H. Carter, Jr., Mater. Sci. Forum 457–460, 41 (2004).
X. Ma and T. Sudarshan, J. Electron. Mater. 33, 450 (2004).
E. Emorhokpor, T. Kerr, I. Zwieback, W. Elkington, M. Dudley, T. Anderson, and J. Chen, Mater. Res. Soc. Symp. Proc. 815, J5.19.1 (2003).
H. Saitoh and T. Kimoto, Mater. Sci. Forum 483–485, 89 (2005).
J. Takahashi, M. Kanaya, and T. Hoshino, Int. Physics Conf. Ser. No. 137 (ICSCRM93, IOP Publishing, 1994), pp. 13–16.
M. Katsuno, N. Ohtani, J. Takahashi, H. Yashiro, and M. Kanaya, Jpn. J. Appl. Phys. 38, 4661 (1999).
M. Katsuno, N. Ohtani, J. Takahshi, H. Yashiro, M. Kanya, and S. Shinoyama, Mater. Sci. Forum 264–268, 837 (1998).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Wan, J., Park, SH., Chung, G. et al. A comparative study of micropipe decoration and counting in conductive and semi-insulating silicon carbide wafers. J. Electron. Mater. 34, 1342–1348 (2005). https://doi.org/10.1007/s11664-005-0260-9
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-005-0260-9