Abstract
P-type ZnO thin films were grown on sapphire substrates with and without nitrous oxide (N2O) by metal organic chemical vapor deposition (MOCVD). The intrinsic p-type ZnO films were achieved by controlling the Zn:O ratio in the range of 0.05–0.2 without N2O flow. Secondary ion mass spectroscopy (SIMS) showed that the films contained little or no nitrogen (N) impurities for all samples. The p-type behavior of the samples should be due to the intrinsic acceptor-like defects VZn, for ZnO film grown without nitrous oxide, and N, occupying O sites as acceptors for ZnO film grown with nitrous oxide. The best p-type ZnO film has low resistivity of 0.369 Ω-cm, high carrier density of 1.62×1019 cm−3, and mobility of 3.14 cm2/V-s. The obtained p-type ZnO films possess a transmittance of nearly 100% in the visible region and strong near-band-edge emission.
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Tan, S.T., Chen, B.J., Sun, X.W. et al. Realization of intrinsic p-type ZnO thin films by metal organic chemical vapor deposition. J. Electron. Mater. 34, 1172–1176 (2005). https://doi.org/10.1007/s11664-005-0247-6
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DOI: https://doi.org/10.1007/s11664-005-0247-6