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Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination

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Abstract

Annealing or processing of AlAs that has been subjected to a wet thermal oxidation process can result in severe delamination of material at the oxidation front. This paper reports a procedure for preventing this delamination and presents a possible cause for the delamination.

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Authors and Affiliations

  1. Department of Electronics and Electrical Engineering, University of Glasgow, G12 8QQ, Glasgow, United Kingdom

    L. Hobbs, I. Eddie, G. Erwin, A. C. Bryce & R. M. De La Rue

  2. Centre for III–V Materials, University of Sheffield, S1O 2TN, Sheffield, United Kingdom

    J. S. Roberts

  3. Department of Physics, University of St. Andrew, KY16 9AJ, St Andrews, United Kingdom

    T. F. Krauss

  4. Department of Materials, Imperial College London, SW7 2AZ, London, United Kingdom

    D. W. Mccomb

  5. Kelvin Nanocharacterisation Centre, Department of Physics and Astronomy, University of Glasgow, UK

    M. Mackenzie

Authors
  1. L. Hobbs
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  2. I. Eddie
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  3. G. Erwin
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  4. A. C. Bryce
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  5. R. M. De La Rue
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  6. J. S. Roberts
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  7. T. F. Krauss
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  8. D. W. Mccomb
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  9. M. Mackenzie
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Hobbs, L., Eddie, I., Erwin, G. et al. Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination. J. Electron. Mater. 34, 232–239 (2005). https://doi.org/10.1007/s11664-005-0209-z

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  • DOI: https://doi.org/10.1007/s11664-005-0209-z

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