Abstract
Using plan-view transmission electron microscopy (PVTEM), we have identified stacking faults (SFs) and planar defects in 4H-SiC PiN diodes subjected to electrical bias. Our observations suggest that not all planar defects seen in the PiN diodes are SFs. By performing diffraction-contrast imaging experiments using TEM, we can distinguish SFs from other planar defects. In addition, high-resolution TEM (HRTEM) imaging and analytical TEM have revealed that some planar defects consist of a 3-nm-wide SiC amorphous layer. Many of these planar defects are orientated parallel to {1\(1\bar 100\)00} planes, whereas others are roughly parallel to the (0001) plane. The appearance of these planar defects suggests that they are grain boundaries.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Zhang, P. Pirouz, and H. Lendenmann, Appl. Phys. Lett. 83, 3320 (2003).
S. Ha, M. Skowronski, J.J. Sumakeris, M.J. Paisley, and M.K. Das, Phys. Rev. Lett. 92, 175504 (2004).
R.E. Stahlbush, M. Fatemi, J.B. Fedison, S.D. Arthur, L.B. Rowland, and S. Wang, J. Electron. Mater. 31, 827 (2002).
M.E. Twigg, R.E. Stahlbush, M. Fatemi, S.D. Arthur, J.B. Fedison, J.B. Tucker, and S. Wang, Appl. Phys. Lett. 82, 2410 (2003); M.E. Twigg, R.E. Stahlbush, M. Fatemi, S.D. Arthur, J.B. Fedison, J.B. Tucker, and S. Wang, Appl. Phys. Lett. 84, 4816 (2004).
Y. Goldberg, M.E. Levinshtei, and S.L. Rumyantsev in Properties of Advanced Semiconductor Materials GaN, AlN, SiC, BN, SiC, SiGe, eds. M.E. Levinshtein, S.L. Rumyantsev, and M.S. Shur (New York: John Wiley & Sons, 2001), pp. 93–148.
J.H. Lienhard IV and J.H. Lienhard V, A Heat Transfer Textbook (Cambridge, MA: Philogiston Press, 2004), p. 13.
S. Ha, M. Benamara, M. Skowronski, and H. Lendermann, Appl. Phys. Lett. 83, 4957 (2003).
P. Hirsh, A. Howie, R.B. Nicholson, D.W. Pashley, and M.J. Whelan, Electron Microscopy of Thin Crystals (Huntington, NY: Krieger, 1977), pp. 222–246.
R. Perez, Phys. Status Solidi A 85, 114 (1984).
R. Gevers, Phil. Mag. 7, 1681 (1962).
R. Monzen and Y. Sumi, Phil. Mag. A 70, 805 (1994).
K. Marukawa, Phil. Mag. 40, 303 (1979).
S.S. Ruvimov and K. Scheerschmidt, Phys. Status Solidi A 141, 269 (1994).
A.K. Head, P. Humble, L.M. Clarebrough, A.J. Morton, and C.T. Forwood, Computed Electron Micrographs and Defect Identification (Amsterdam: North Holland, 1973), pp. 85–95.
L.J. Teutonico, Mater. Sci. Eng. 6, 27 (1970).
X.F. Zhang and L.C. De Jonghe, J. Mater. Res. 18, 2807 (2003).
F. Siegelin, H.J. Kleebe, and L.S. Sigl, J. Mater. Res. 18, 2608 (2003).
A.R. Powell et al., Mater. Sci. Forum 457, 41 (2004).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Twigg, M.E., Stahlbush, R.E., Irvine, K.G. et al. Planar defects in 4H-SiC PiN diodes. J. Electron. Mater. 34, 351–356 (2005). https://doi.org/10.1007/s11664-005-0109-2
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-005-0109-2