Abstract
In this article, we report the electron beam-induced current (EBIC) measurements in a GaN Schottky diode performed in the line-scan configuration. A theoretical model with an extended generation source was used to accurately extract some minority carrier transport properties of the unintentionally doped n-GaN layer. The minority hole diffusion length is found to increase from ∼0.35 µm near the junction to ∼1.74 µm at the bulk regions. This change is attributed to an increase of the carrier lifetime caused by the polarization effects, which are preponderant in this component. For depth distances exceeding 0.65 µm, it is shown that the measured current is produced by the reabsorption recombination radiation process. This corresponds to an absorption coefficient of 0.178 µm−1, in good agreement with the optical absorption measurement.
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Matoussi, A., Boufaden, T., Guermazi, S. et al. Electron beam-induced current investigation of GaN Schottky diode. J. Electron. Mater. 34, 1059–1064 (2005). https://doi.org/10.1007/s11664-005-0096-3
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DOI: https://doi.org/10.1007/s11664-005-0096-3