Skip to main content
SpringerLink
Log in

Increased lateral oxidation rates of AllnAs on InP using short-period superlattices

  • Regular Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

We present greatly increased lateral oxidation rates for AlInAs grown as a short-period superlattice of InAs and AlAs compared to the analog alloy. The tensile strain in the AlAs layers is balanced by the compressive strain in the InAs layers, creating a strain-compensated alloy lattice-matched to InP. Oxidation layers with superlattice periods up to 40 Å and cladded by lattice-matched InGaAs layers were grown on InP substrates and laterally oxidized at temperatures ranging from 450°C to 525°C. The oxidation depth for a given time and temperature was seen to increase with superlattice period, allowing increased oxidation depths or reduced oxidation temperatures compared to the analog alloy. Oxidized layers were examined with transmission electron microscopy and were found to retain some of the superlattice structure.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P.A. Parikh, P.M. Chavarkar, and U.K. Mishra, IEEE Electron Dev. Lett. 18, 111 (1997).

    Article  CAS  Google Scholar 

  2. E.I. Chen, N. Holonyak, Jr., S.A. Maranowski, Appl. Phys. Lett. 66, 2688–90 (1995).

    Article  CAS  Google Scholar 

  3. M.H. MacDougal, P.D. Dapkus, V. Pudikov, H. Zhao, and G.M. Yang, IEEE Photonics Technol. Lett. 7, 229 (1995).

    Article  Google Scholar 

  4. K.D. Choquette, K.L. Lear, R.P. Schneider, and K.M. Geib, Appl. Phys. Lett. 66, 3413 (1995).

    Article  CAS  Google Scholar 

  5. H. Takenouchi, T. Kagawa, Y. Ohiso, T. Tadokoro, and T. Kurokawa, Electron. Lett. 32, 1671 (1996).

    Article  CAS  Google Scholar 

  6. P.A. Grudowski, R.V. Chelakara, and R.D. Dupuis, Appl. Phys. Lett. 69, 388 (1994).

    Article  Google Scholar 

  7. S.J. Caracci, M.R. Krames, and N. Holonyak, J. Appl. Phys. 75, 2706 (1994).

    Article  CAS  Google Scholar 

  8. H. Gebretsadik, K. Kamath, W.-D. Zhou, P. Bhattacharya, C. Caneau, and R. Bhat, Appl. Phys. Lett. 72, 135 (1998).

    Article  CAS  Google Scholar 

  9. B. Koley, F.G. Johnson, O. King, S.S. Saini, and M. Dagenais, Appl. Phys. Lett. 75, 1264 (1999).

    Article  CAS  Google Scholar 

  10. J.E. Oh, P.K. Bhattacharya, Y.C. Chen, O. Ana, and M. Mattingly, J. Electron. Mater. 19, 435 (1990).

    Article  CAS  Google Scholar 

  11. A. Hase, H. Kunzel, D.R.T. Zahn, and W. Richter, J. Appl. Phys. 76, 2459 (1993).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Materials Dept., University of California, 93106, Santa Barbara, CA

    E. Hall, A. Huntington, R. L. Naone, H. Kroemer & L. A. Coldren

  2. Electrical and Computer Engineering Dept., University of California, 93106, Santa Barbara, CA

    H. Kroemer & L. A. Coldren

Authors
  1. E. Hall
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Huntington
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. L. Naone
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Kroemer
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. L. A. Coldren
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hall, E., Huntington, A., Naone, R.L. et al. Increased lateral oxidation rates of AllnAs on InP using short-period superlattices. J. Electron. Mater. 29, 1100–1104 (2000). https://doi.org/10.1007/s11664-004-0271-y

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-004-0271-y

Key words

Search

Navigation