Skip to main content
SpringerLink
Log in

Reciprocal space mapping of ordered domains in InxGa1−xP

  • Regular Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

We applied high resolution x-ray diffraction techniques to determine the three dimensional domain shape in nominally lattice-matched, CuPtB ordered, InxGa1−xP epitaxial layers deposited on GaAs by metal organic vapor phase epitaxy. A technique of reciprocal space mapping is described which provides three-dimensional information on the shape and size of the ordered domains. The domain shape is obtained by reciprocal space mapping along orthogonal crystallographic directions. Applying this technique shows that, at large miscut angles, the domains are oriented close to the growth direction, and are elongated by differing extents along the [110] and [\(\bar 110\)].

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Zunger and S. Mahajan, Handbook on Semiconductors (Amsterdam: Elsevier Science B.V., 1994).

    Google Scholar 

  2. M. Suzuki, Y. Nishikawa, M. Ishikawa, I. Hino, and T. Yuasa, J. Cryst. Growth 113, 127 (1991).

    Article  CAS  Google Scholar 

  3. K.A. Mader and A. Zunger, Appl. Phys. Lett. 64, 2882 (1994).

    Article  CAS  Google Scholar 

  4. R.L. Forrest, T.D. Golding, S.C. Moss, Z. Zhang, J.F. Geisz, J.M. Olson, A. Mascarenhas, P. Ernst, and C. Geng, Phys. Rev. B 58, 15355 (1998).

    Article  CAS  Google Scholar 

  5. M.K. Lee, R.H. Horng, and L.C. Haung, J. Cryst. Growth 124, 358 (1992).

    Article  CAS  Google Scholar 

  6. L.C. Su, I.H. Ho, and G.B. Stringfellow, Appl. Phys. Lett. 65, 749 (1994).

    Article  CAS  Google Scholar 

  7. S.R. Lee (Paper presented at Workshop W-10, Heteroepitaxial Layers and Semiconductor Substrates I, 46th Annual Denver X-Ray Conference, Steamboat Springs, CO, 1997).

  8. L. Francesio, L. Alagna, B. Capelle, C. Ferrari, P. Franzosi and M. Sauvage, Il Nuovo Cimento 19D, 537 (1997).

    Article  CAS  Google Scholar 

  9. R.L. Forrest, J. Kulik, T.D. Golding, and S.C. Moss, J. Mater. Res. 15, 45 (2000).

    CAS  Google Scholar 

  10. S.R. Lee, B.L. Boyle, T.J. Drummond, J.W. Medernach, and R.P. Schneider, Adv. in X-ray Analysis Vol. 38, ed. P. Predecki (New York: Plenum, 1995), p. 201.

    Google Scholar 

  11. L.C. Su, I.H. Ho, and G.B. Stringfellow, J. Appl. Phys. 75, 5135 (1994).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Materials, Science and Engineering, University of California, Los Angeles, 6532 Boelter Hall, 90095-1595, Los Angeles, CA

    R. R. Hess, C. D. Moore, R. L. Forrest, R. T. Nielsen & M. S. Goorsky

Authors
  1. R. R. Hess
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. C. D. Moore
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. L. Forrest
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. R. T. Nielsen
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. S. Goorsky
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hess, R.R., Moore, C.D., Forrest, R.L. et al. Reciprocal space mapping of ordered domains in InxGa1−xP. J. Electron. Mater. 29, 1063–1066 (2000). https://doi.org/10.1007/s11664-004-0265-9

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-004-0265-9

Key words

Search

Navigation