Abstract
The strain distribution in thick hydride vapor-phase epitaxial (HVPE)-GaN layers grown on metal-organic vapor-phase epitaxial GaN templates was studied by means of photoluminescence, x-ray mapping, and lattice parameter analysis. A variable temperature x-ray study of the film curvature was used for verification of the strain type. The relation between the strain inhomogeneity and the wafer bending in films residing on sapphire and freestanding on the thickness of the layer and the substrate is analyzed. Possibilities to improve the uniformity of the film characteristics and to reduce the bending of the HVPE-GaN films are discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S.S Park, I.W. Park, and S.H. Choh, Proc. IWN Nagoya 2000: Int. Workshop on Nitride Semiconductors (Tokyo: Institute of Pure and Applied Physics, 2000), pp. 60–63.
R.P. Vaudo, G.R. Brandes, J.S. Flynn, X. Xu, M.F. Chriss, C.S. Christos, D.M. Keogh, and F.D. Tamweber, Proc. IWN Nagoya 2000: Int. Workshop on Nitride Semiconductors (Tokyo: Institute of Pure and Applied Physics, 2000), pp. 15–18.
T. Paskova et al., MRS Internet J. Nitride Semicond. Res. 5S1, W3.14 (2000).
E. Valcheva, T. Paskova, M. Abrashev, P.P. Paskov, P.O.Å. Persson, E.M. Goldys, R. Beccard, M. Heuken, and B. Monemar, J. Appl. Phys. 90, 6011 (2001).
T. Böttcher (Ph.D. thesis, Bremen University, 2002).
C.R. Miskys, M.K. Kelly, O. Ambacher, G. Martinez-Criado, and M. Stutzmann, Appl. Phys. Lett. 77, 1858 (2000).
P.F. Fewster and N.L. Andrew, J. Appl. Cryst. 28, 451 (1995).
T. Paskova, E. Valcheva, J. Birch, S. Tungasmita, P.O.Å. Persson, R. Beccard, M. Heuken, and B. Monemar, J. Appl. Phys. 88, 5729 (2000).
K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, and S. Porowski, Phys. Rev. B 60, 1471 (1999).
H. Amano, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 27, L1384 (1988).
H. Siegle, A. Hoffmann, L. Eckey, C. Thomsen, J. Christen, F. Bertram, D. Schmidt, D. Rudloff, and K. Hiramatsu, Appl. Phys. Lett. 71, 2490 (1997).
J. Jasinski, W. Swider, Z. Liliental-Weber, P. Visconti, K.M. Jones, M.A. Reshchikov, F. Yun, H. Morkoc, S.S. Park, and K.Y. Lee, Appl. Phys. Lett. 78, 2297 (2001).
B. Arnaudov, T. Paskova, E.M. Goldys, S. Evtimova, and B. Monemar, Phys. Rev. B 64, 45213 (2001).
T. Böttcher, S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and J.S. Speck, Appl. Phys. Lett. 78, 1976 (2001).
S. Hearne, E. Chason, J. Han, J.A. Floro, J. Figiel, J. Hunter, H. Amano, and I.S.T. Tsong, Appl. Phys. Lett. 74, 356 (1999).
D.C. Look, C.E. Stutz, R.J. Molnar, K. Saarinen, and Z. Liliental-Weber, Solid State Commun. 117, 571 (2001).
A.F. Wright and U. Grossner, Appl. Phys. Lett. 73, 2751 (1998).
X.L. Sun, S.H. Goss, L.J. Brillson, D.C. Look, and R.J. Molnar, J. Appl. Phys. 91, 6729 (2002).
T. Paskova, V. Darakchieva, P.P. Paskov, U. Södervall, and B. Monemar, J. Cryst. Growth 246, 207 (2002).
J. Oila, J. Kivoja, V. Ranki, K. Saarinen, D.C. Look, R.J. Molnar, S.S. Park, S.K. Lee, and J.Y. Han, Appl. Phys. Lett. 82, 3433 (2003).
G.H. Olsen and M. Ettenberg, J. Appl. Phys. 48, 2543 (1977).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Paskova, T., Darakchieva, V., Valcheva, E. et al. Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending. J. Electron. Mater. 33, 389–394 (2004). https://doi.org/10.1007/s11664-004-0189-4
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-004-0189-4