Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

Abstract

The strain distribution in thick hydride vapor-phase epitaxial (HVPE)-GaN layers grown on metal-organic vapor-phase epitaxial GaN templates was studied by means of photoluminescence, x-ray mapping, and lattice parameter analysis. A variable temperature x-ray study of the film curvature was used for verification of the strain type. The relation between the strain inhomogeneity and the wafer bending in films residing on sapphire and freestanding on the thickness of the layer and the substrate is analyzed. Possibilities to improve the uniformity of the film characteristics and to reduce the bending of the HVPE-GaN films are discussed.

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References

  1. 1.

    S.S Park, I.W. Park, and S.H. Choh, Proc. IWN Nagoya 2000: Int. Workshop on Nitride Semiconductors (Tokyo: Institute of Pure and Applied Physics, 2000), pp. 60–63.

    Google Scholar 

  2. 2.

    R.P. Vaudo, G.R. Brandes, J.S. Flynn, X. Xu, M.F. Chriss, C.S. Christos, D.M. Keogh, and F.D. Tamweber, Proc. IWN Nagoya 2000: Int. Workshop on Nitride Semiconductors (Tokyo: Institute of Pure and Applied Physics, 2000), pp. 15–18.

    Google Scholar 

  3. 3.

    T. Paskova et al., MRS Internet J. Nitride Semicond. Res. 5S1, W3.14 (2000).

    Google Scholar 

  4. 4.

    E. Valcheva, T. Paskova, M. Abrashev, P.P. Paskov, P.O.Å. Persson, E.M. Goldys, R. Beccard, M. Heuken, and B. Monemar, J. Appl. Phys. 90, 6011 (2001).

    Article  CAS  Google Scholar 

  5. 5.

    T. Böttcher (Ph.D. thesis, Bremen University, 2002).

  6. 6.

    C.R. Miskys, M.K. Kelly, O. Ambacher, G. Martinez-Criado, and M. Stutzmann, Appl. Phys. Lett. 77, 1858 (2000).

    Article  CAS  Google Scholar 

  7. 7.

    P.F. Fewster and N.L. Andrew, J. Appl. Cryst. 28, 451 (1995).

    Article  CAS  Google Scholar 

  8. 8.

    T. Paskova, E. Valcheva, J. Birch, S. Tungasmita, P.O.Å. Persson, R. Beccard, M. Heuken, and B. Monemar, J. Appl. Phys. 88, 5729 (2000).

    Article  CAS  Google Scholar 

  9. 9.

    K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, and S. Porowski, Phys. Rev. B 60, 1471 (1999).

    Article  CAS  Google Scholar 

  10. 10.

    H. Amano, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 27, L1384 (1988).

    Google Scholar 

  11. 11.

    H. Siegle, A. Hoffmann, L. Eckey, C. Thomsen, J. Christen, F. Bertram, D. Schmidt, D. Rudloff, and K. Hiramatsu, Appl. Phys. Lett. 71, 2490 (1997).

    Article  CAS  Google Scholar 

  12. 12.

    J. Jasinski, W. Swider, Z. Liliental-Weber, P. Visconti, K.M. Jones, M.A. Reshchikov, F. Yun, H. Morkoc, S.S. Park, and K.Y. Lee, Appl. Phys. Lett. 78, 2297 (2001).

    Article  CAS  Google Scholar 

  13. 13.

    B. Arnaudov, T. Paskova, E.M. Goldys, S. Evtimova, and B. Monemar, Phys. Rev. B 64, 45213 (2001).

    Article  Google Scholar 

  14. 14.

    T. Böttcher, S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and J.S. Speck, Appl. Phys. Lett. 78, 1976 (2001).

    Article  Google Scholar 

  15. 15.

    S. Hearne, E. Chason, J. Han, J.A. Floro, J. Figiel, J. Hunter, H. Amano, and I.S.T. Tsong, Appl. Phys. Lett. 74, 356 (1999).

    Article  CAS  Google Scholar 

  16. 16.

    D.C. Look, C.E. Stutz, R.J. Molnar, K. Saarinen, and Z. Liliental-Weber, Solid State Commun. 117, 571 (2001).

    Article  CAS  Google Scholar 

  17. 17.

    A.F. Wright and U. Grossner, Appl. Phys. Lett. 73, 2751 (1998).

    Article  CAS  Google Scholar 

  18. 18.

    X.L. Sun, S.H. Goss, L.J. Brillson, D.C. Look, and R.J. Molnar, J. Appl. Phys. 91, 6729 (2002).

    Article  CAS  Google Scholar 

  19. 19.

    T. Paskova, V. Darakchieva, P.P. Paskov, U. Södervall, and B. Monemar, J. Cryst. Growth 246, 207 (2002).

    Article  CAS  Google Scholar 

  20. 20.

    J. Oila, J. Kivoja, V. Ranki, K. Saarinen, D.C. Look, R.J. Molnar, S.S. Park, S.K. Lee, and J.Y. Han, Appl. Phys. Lett. 82, 3433 (2003).

    Article  CAS  Google Scholar 

  21. 21.

    G.H. Olsen and M. Ettenberg, J. Appl. Phys. 48, 2543 (1977).

    Article  CAS  Google Scholar 

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Paskova, T., Darakchieva, V., Valcheva, E. et al. Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending. Journal of Elec Materi 33, 389–394 (2004). https://doi.org/10.1007/s11664-004-0189-4

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Key words

  • GaN
  • HVPE
  • strain
  • wafer bending