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The contact characteristics of SiCN films for opto-electrical devices applications

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Abstract

This paper reports the study of ohmic and Schottky contacts to rapid-thermal chemical vapor deposition (RTCVD) deposited SiCN films in detail. Two prototypical blue-violet light-emitting devices with SiCN material based on the study have been developed. Both photoluminescence (PL) measurement and electroluminescence (EL) photography are used to evaluate the devices’ optical performances. The experimental results show the potential of SiCN for advanced blue and ultraviolet (UV) optoelectronic applications.

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Authors and Affiliations

  1. VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70100, Republic of China

    Wen-Rong Chang, Yean-Kuen Fang, Shyh-Fann Ting, Shih-Fang Chen, Chun-Yu Lin, Sheng-Beng Hwang & Cheng-Nan Chang

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  1. Wen-Rong Chang
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  2. Yean-Kuen Fang
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  3. Shyh-Fann Ting
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  4. Shih-Fang Chen
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  5. Chun-Yu Lin
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  6. Sheng-Beng Hwang
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  7. Cheng-Nan Chang
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Chang, WR., Fang, YK., Ting, SF. et al. The contact characteristics of SiCN films for opto-electrical devices applications. J. Electron. Mater. 33, 181–184 (2004). https://doi.org/10.1007/s11664-004-0177-8

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  • DOI: https://doi.org/10.1007/s11664-004-0177-8

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