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Pulsed laser annealing of self-organized InAs/GaAs quantum dots

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Abstract

The effect of pulsed laser annealing (PLA), using an excimer laser, on the luminescence efficiency of self-organized InAs/GaAs and In0.4Ga0.6As/GaAs quantum dots has been investigated. It is found that such annealing can enhance both the peak and integrated photoluminescence (PL) efficiency of the dots, up to a factor of 5–10 compared to as-grown samples, without any spectral shift of the luminescence spectrum. The improved luminescence is attributed to the annealing of nonradiative point and extended defects in and around the dots.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, University of Michigan, 48109-2122, Ann Arbor, MI

    S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips & P. Bhattacharya

  2. Department of Physics, University of Illinois, 60607-7059, Chicago, IL

    Y. Lei

  3. MS 72–150 Lawrence Berkeley National Laboratory, National Center for Electron Microscopy, 94720, Berkeley, CA

    N. Browning

Authors
  1. S. Chakrabarti
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  2. S. Fathpour
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  3. K. Moazzami
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  4. J. Phillips
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  5. Y. Lei
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  6. N. Browning
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  7. P. Bhattacharya
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Chakrabarti, S., Fathpour, S., Moazzami, K. et al. Pulsed laser annealing of self-organized InAs/GaAs quantum dots. J. Electron. Mater. 33, L5–L8 (2004). https://doi.org/10.1007/s11664-004-0147-1

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  • DOI: https://doi.org/10.1007/s11664-004-0147-1

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