Abstract
Heavily compensated GaSb (2-in.-diameter substrates) with resistivity as high as 7 × 103 Ω-cm, corresponding to a net donor concentration of 3.5×1013 cm−3 at 77 K, and 16.4 Ω-cm, corresponding to net donor concentration of 1.16×1016 cm−3 at 300 K, have been obtained by tellurium (Te) compensation in vertical-Bridgman-grown bulk crystals. Very interesting p- to n-type as well as n- to p-type changes have been observed as a function of temperature in these samples.
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Pino, R., Ko, Y. & Dutta, P.S. High-resistivity GaSb bulk crystals grown by the vertical bridgman method. J. Electron. Mater. 33, 1012–1015 (2004). https://doi.org/10.1007/s11664-004-0028-7
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DOI: https://doi.org/10.1007/s11664-004-0028-7