Abstract
We observe hydrogen platelet buildup in single-crystalline silicon caused by hydrogen-plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried-defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena and discuss applicability of the plasma hydrogenation to silicon-on-insulator (SOI) wafer fabrication by layer transfer.
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Usenko, A. Layer-transfer process for silicon-on-insulator with improved manufacturability. J. Electron. Mater. 32, 872–876 (2003). https://doi.org/10.1007/s11664-003-0203-2
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DOI: https://doi.org/10.1007/s11664-003-0203-2