Abstract
Heterogeneous integration of technologically important materials, such as SiC/Si, GaN/Si, Ge/Si, Si/nano-Si/Si, SiC-on-insulator (SiCOI), and ZrO2/SiO2/Si, was successfully made by ultra-high vacuum (UHV) wafer bonding. A unique, UHV bonding unit, especially designed to control interface structure, chemistry, and crystallographic orientation within narrow limits, was used to produce homophase and heterophase planar interfaces. In-situ thin-film-deposition capability in conjunction with the wafer bonding offered even more flexibility for producing integrated artificial structures. Prebonding surface preparation was critically important for the formation of strong bonded interfaces. The substrate-surface morphology was examined by atomic-force microscopy (AFM) prior to bonding. In-situ Auger spectroscopy measurements of surface chemistry were invaluable predictors of bonding behaviors. Plasma processing very effectively cleaned the substrates, achieving a near-perfect interfacial bond at the atomic scale. The integrity of the bonded interfaces was studied in the light of their structural and chemical characteristics analyzed by high-resolution, analytical electron microscopy.
Similar content being viewed by others
References
Q.-Y. Tong and U. Gosele, Semiconductor Wafer Bonding: Science and Technology (New York: John Wiley & Sons, 1999), pp. 233–288.
D. Matthiesen, N. Newman, D. Norton, and D. Schlom, eds., Substrate Engineering—Paving the Way to Epitaxy, Materials Research Society Symposia, Vol. 587 (Pittsburgh, PA: MRS, 2000), pp. 1–228.
M.J. Kim, R.W. Carpenter, M.J. Cox, and J. Xu, J. Mater. Res. 15, 1008 (2000).
N.J. Zaluzec, B.J. Kestel, and D. Henriks, Microsc. Microanal. 3, 983 (1997).
M.J. Kim and R.W. Carpenter, J. Mater. Res. 5, 347 (1990).
K.D. Hobart, M.E. Twigg, F.J. Kub, and C.A. Desmond, Appl. Phys. Lett. 72, 1095 (1998).
L. Canham, Nature 408, 411 (2000).
W.P. Maszara, G. Goetz, A. Cavilia, and J.B. McKitterixk, J. Appl. Phys. 64, 4943 (1988).
H.M. Liaw, R. Venugopal, J. Wan, R. Doyle, P.L. Fejes, and M.R. Melloch, Solid State Electron. 44, 685 (2000).
W.S. Wong, A.B. Wengrow, Y. Cho, A. Salleo, N.J. Quitoriano, N.W. Cheung, and T. Sands, J. Electron. Mater. 28, 1409 (1999).
M.K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, and M. Stutzmann, Phys. Status Solidi A159, R3 (1997).
G.D. Wilk, R.M. Wallace, and J.M. Anthony, J. Appl. Phys. 89, 5243 (2001).
W.M. Skiff, R.W. Carpenter, and S.H. Lin, J. Appl. Phys. 64, 6328 (1988).
J. Wong, D.A. Jefferson, T.G. Sparrow, J.M. Thomas, R.H. Milne, A. Howie, and E.F. Koch, Appl. Phys. Lett. 48, 65 (1986).
D.W. McComb, Phys. Rev. B54, 7094 (1996).
C.C. Ahn and O. Krivanek, EELS Atlas (Warrendale, PA: Gatan Inc., 1983), p. 40.
H.K. Shin, D.J. Lockwood, and J.-M. Baribeau, Solid State Comm. 114, 505 (2000) and references therein.
Z. Cheng, G. Taraschi, M.T. Currie, C.W. Leitz, M.L. Lee, A. Pitera, T.A. Langdo, J.L. Hoyt, D.A. Antoniadis, and E.A. Fitzgerald, J. Electron. Mater. 30, L37 (2001).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kim, M.J., Carpenter, R.W. Heterogeneous silicon integration by ultra-high vacuum wafer bonding. J. Electron. Mater. 32, 849–854 (2003). https://doi.org/10.1007/s11664-003-0199-7
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-003-0199-7