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InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

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Abstract

Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO2/TiO2 distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED.

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References

  1. Y.K. Su, S.J. Chang, C.H. Ko, J.F. Chen, W.H. Lan, W.J. Lin, Y.T. Cherng, and J. Webb, IEEE Trans. Electron Dev. 49, 1361 (2002).

    Article  CAS  Google Scholar 

  2. S.J. Chang, C.H. Kuo, Y.K. Su, L.W. Wu, J.K. Sheu, T.C. Wen, W.C. Lai, J.F. Chen, and J.M. Tsai, IEEE J. Sel. Top. Quant. Electron. 8, 744 (2002).

    Article  CAS  Google Scholar 

  3. T.C. Wen, S.J. Chang, L.W. Wu, Y.K. Su, W.C. Lai, C.H. Kuo, C.H. Chen, J.K. Sheu, and J.F. Chen, IEEE Tran. Electron Dev. 49, 1093 (2002).

    Article  CAS  Google Scholar 

  4. C.H. Kuo, S.J. Chang, Y.K. Su, J.F. Chen, L.W. Wu, J.K. Sheu, C.H. Chen, and G.C. Chi, IEEE Electron Dev. Lett. 23, 240 (2002).

    Article  CAS  Google Scholar 

  5. C.S. Chang, Y.K. Su, P.T. Chang, Y.R. Wu, K.H. Huang, and T.P. Chen, IEEE Photon. Technol. Lett. 9, 182 (1997).

    Article  Google Scholar 

  6. T. Honda, T. Sakaguchi, F. Koyama, K. Iga, K. Yanashima, K. Inoue, H. Munekata, and H. Kukimoto, J. Appl. Phys. 78, 4784 (1995).

    Article  CAS  Google Scholar 

  7. W.C. Lai, S.J. Chang, M. Yokoyama, J.K. Sheu, and J.F. Chen, IEEE Photon. Technol. Lett. 13, 559 (2001).

    Article  Google Scholar 

  8. Y.K. Su, S.J. Chang, C.H. Chen, J.F. Chen, G.C. Chi, J.K. Sheu, W.C. Lai, and J.M. Tsai, IEEE Sensors J. 2, 366 (2002).

    Article  CAS  Google Scholar 

  9. J.K. Sheu, M.L. Lee, C.J. Tun, C.J. Kao, L.S. Yeh, S.J. Chang, and G.C. Chi, IEEE J. Sel. Top. Quant. Electron. 8, 767 (2002).

    Article  CAS  Google Scholar 

  10. C.H. Chen, S.J. Chang, Y.K. Su, J.K. Sheu, J.F. Chen, C.H. Kuo, and Y.C. Lin, IEEE Photon. Technol. Lett. 14, 908 (2002).

    Article  Google Scholar 

  11. L.W. Wu, S.J. Chang, T.C. Wen, Y.K. Su, W.C. Lai, C.H. Kuo, C.H. Chen, and J.K. Sheu, IEEE J. Quant. Electron. 38, 446 (2002).

    Article  CAS  Google Scholar 

  12. J.K. Sheu, C.J. Pan, G.C. Chi, C.H. Kuo, L.W. Wu, C.H. Chen, S.J. Chang, and Y.K. Su, IEEE Photon. Technol. Lett. 14, 450 (2002).

    Article  Google Scholar 

  13. S.J. Chang, W.C. Lai, Y.K. Su, J.F. Chen, C.H. Liu, and U.H. Liaw, IEEE J. Sel. Top. Quant. Electron. 8, 278 (2002).

    Article  CAS  Google Scholar 

  14. C.H. Chen, Y.K. Su, S.J. Chang, G.C. Chi, J.K. Sheu, J.F. Chen, C.H. Liu, and U.H. Liaw, IEEE Electron Dev. Lett. 23, 130 (2002).

    Article  Google Scholar 

  15. J.K. Sheu, J.M. Tsai, S.C. Shei, W.C. Lai, T.C. Wen, C.H. Kou, Y.K. Su, S.J. Chang, and G.C. Chi, IEEE Electron Dev. Lett. 22, 460 (2001).

    Article  CAS  Google Scholar 

  16. C.H. Chen, S.J. Chang, Y.K. Su, G.C. Chi, J.Y. Chi, C.A. Chang, J.K. Sheu, and J.F. Chen, IEEE Photon. Technol. Lett. 13, 848 (2001).

    Article  Google Scholar 

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Hsu, Y.P., Chang, S.J., Su, Y.K. et al. InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates. J. Electron. Mater. 32, 403–406 (2003). https://doi.org/10.1007/s11664-003-0166-3

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  • DOI: https://doi.org/10.1007/s11664-003-0166-3

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