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Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC

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Abstract

Interfacial reactions, surface morphology, and current-voltage (I-V) characteristics of Ti/Al/4H-SiC and TiN/Al/4H-SiC were studied before and after high-temperature annealing. It was observed that surface smoothness of the samples was not significantly affected by the heat treatment at up to 900°C, in contrast to the case of Al/SiC. Transmission electron microscopy (TEM) observation of the Ti(TiN)/Al/SiC interface showed that Al layer reacted with the SiC substrate at 900°C and formed an Al-Si-(Ti)-C compound at the metal/SiC interface, which is similar to the case of the Al/SiC interface. The I-V measurement showed reasonable ohmic properties for the Ti/Al films, indicating that the films can be used to stabilize the Al/SiC contact by protecting the Al layer from the potential oxidation and evaporation problem, while maintaining proper contact properties.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Photonic and Electronic Thin Film Research Laboratory, Chonnam National University, 500-757, Gwangju, Korea

    Byung-Teak Lee, Jong-Yoon Shin, Seon-Hoon Kim & Jin-Hyeok Kim

  2. Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH), 790-784, Pohang, Korea

    Sang-Yoon Han & Jong Lam Lee

Authors
  1. Byung-Teak Lee
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  2. Jong-Yoon Shin
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  3. Seon-Hoon Kim
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  4. Jin-Hyeok Kim
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  5. Sang-Yoon Han
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  6. Jong Lam Lee
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Lee, BT., Shin, JY., Kim, SH. et al. Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC. J. Electron. Mater. 32, 501–504 (2003). https://doi.org/10.1007/s11664-003-0133-z

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  • DOI: https://doi.org/10.1007/s11664-003-0133-z

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