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Influence of H2- and N2-ambient annealing of indium-tin oxide film on plastic substrate for organic light-emitting diode

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Abstract

Indium tin oxide (ITO) film was deposited on an ARTON plastic substrate using 80 W, direct current (DC) magnetron sputtering on an unheated substrate, then annealed at 150°C under either hydrogen or nitrogen gas for periods ranging from 2 h to 8 h. Film surface morphology, crystal size, crystal orientation, and visible region optical transparency were studied. The grain size was found to increase with increased annealing time. Grain size was larger under nitrogen ambience than under hydrogen ambience. Sheet resistance of as-deposited ITO films was 87Ω/sq, but with nitrogen ambient annealing at 150°C for 8 h, it declined to 65Ω/sq. Average ITO-film transmittance was 88% after an 8-h nitrogen-ambient annealing.

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Authors and Affiliations

  1. Department of Electrical Engineering, Southern Taiwan University of Technology, Yung-Kang City, Tainan, Taiwan 70101, Republic of China

    C. J. Huang & W. C. Shih

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  1. C. J. Huang
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  2. W. C. Shih
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Huang, C.J., Shih, W.C. Influence of H2- and N2-ambient annealing of indium-tin oxide film on plastic substrate for organic light-emitting diode. J. Electron. Mater. 32, L9–L13 (2003). https://doi.org/10.1007/s11664-003-0099-x

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  • DOI: https://doi.org/10.1007/s11664-003-0099-x

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