Abstract
This work reports our investigation of a microstructure of self-aligned Ti germanosilicide made on polycrystalline Si/SiGe/Si multilayers. The existence of the SiGe layer restricted the growth of the Ti germanosilicide layer and produced protrusions penetrating the underlying polycrystalline layer. Each protrusion corresponded to a stacking-faulted single grain of the C49 phase. The microstructure of the thin Ti germanosilicide layer and the deep protrusions caused an increase of the sheet resistance and the contact resistivity of the extrinsic base region. The raised contact resistivity led to a degradation of radio frequency (RF) and noise characteristics of the SiGe heterojunction bipolar transistor (HBT).
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Gruhle, Proc. Bipolar/BiCMOS Circuits and Technology Meeting (Piscataway, NJ: IEEE, 2001), pp. 19–25.
D. Harame, J. Comfort, J. Cressler, E. Crabbe, J. Sun, B. Meyerson, and T. Tice, IEEE Trans. Electron Dev. 42, 455 (1995).
H. Schumacher, U. Erben, and W. Duerr, Solid-State Electron. 41, 1485 (1997).
S. Jain, S. Decoutere, M. Willander, and H. Maes, Semicond. Sci. Technol. 16, R51 (2001).
C. Menon, A. Bentzen, and H. Radamson, J. Appl. Phys. 90, 4805 (2001).
D. Aldrich, Y. Chen, D. Sayers, R. Nemanich, S. Ashburn, and M. Ozturk, J. Appl. Phys. 77, 5107 (1995).
Y. Yasuda, O. Nakatsuka, and S. Zaima, Thin Solid Films 373, 73 (2000).
S. Ashburn, M. Ozturk, G. Harris, and D. Maher, J. Electron. Mater. 24, 773 (1995).
M. Gluck, A. Schuppen, M. Rosler, W. Heinrich, J. Hersener, U. Konig, O. Yam, C. Cytermann, and M. Eizenberg, Thin Solid Films 270, 549 (1995).
S.-Y. Lee, H.-S. Kim, S.-H. Lee, K.-H. Shim, J.-Y. Kang, and M.-K. Song, J. Mater. Sci.: Mater. Electron. 12, 467 (2001).
O. Thomas, F. d’Heurle, S. Delage, and G. Scilla, Appl. Surf. Sci. 38, 27 (1989).
L. Clevenger, R. Mann, R. Roy, K. Saenger, C. Cabral, and J. Piccirillo, J. Appl. Phys. 76, 7874 (1994).
E. Colgan, J. Gambino, and Q. Hong, Mater. Sci. Eng. R16, 43 (1996).
N. Boutarek and R. Madar, Appl. Surf. Sci. 73, 209 (1993).
D. Aldrich, F. d’Heurle, D. Sayers, and R. Nemanich, Phys. Rev. B 53, 16279 (1996).
P. Gas, G. Scilla, A. Michel, F. LeGoues, O. Thomas, and F. d’Heurle, J. Appl. Phys. 63, 5335 (1988).
C.W. Park, S.-Y. Lee, S.-H. Kim, and J.-Y. Kang, J. Vac. Sci. Technol. B, 21, 293 (2003).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lee, SY., Park, C.W. & Kang, JY. Self-aligned Ti germanosilicide formation on a polycrystalline Si/SiGe/Si extrinsic base for SiGe heterojunction bipolar transistors. J. Electron. Mater. 32, 1349–1356 (2003). https://doi.org/10.1007/s11664-003-0035-0
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-003-0035-0