Abstract
GaAs epilayers were grown on Ge by metal-organic chemical vapor deposition (MOCVD) with As or Ga prelayers. The grown epilayers were examined for surface morphology, antiphase domain (APD) presence, and optical quality using optical interference contrast microscopy, molten potassium hydroxide (KOH) etching, and photoluminescence (PL) spectroscopy. The As prelayer results in smooth, shiny, and APD-free epilayers with good optical quality. In contrast, the Ga prelayer results in a rough surface with APDs and higher carbon incorporation.
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Tyagi, R., Singh, M., Thirumavalavan, M. et al. The influence of As and Ga prelayers on the metal-organic chemical vapor deposition of GaAs/Ge. J. Electron. Mater. 31, 234–237 (2002). https://doi.org/10.1007/s11664-002-0212-6
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DOI: https://doi.org/10.1007/s11664-002-0212-6