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The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors

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Abstract

Strained AlxIn1−xAs/Ga0.47In0.53As heterojunction N-p+ diodes and heterojunction bipolar transistors (HBTs) have been grown on InP substrates by solid-source molecular-beam epitaxy, fabricated, and characterized. To determine the effects of the conduction-band discontinuity at the emitter-base heterojunction on turn-on voltage and ideality factor, a strained Al0.7In0.3As layer is inserted in the emitter near the base. Changes in transport across the junction are observed as a function of the strained-layer position and thickness. These results were used to implement strained emitter HBTs.

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Authors and Affiliations

  1. Microelectronics Research Center, School of Electrical and Computer Engineering, Georgia Institute of Technology, 30332-0250, Atlanta, GA

    Changhyun Yi, Robert A. Metzger & April S. Brown

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  1. Changhyun Yi
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  2. Robert A. Metzger
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  3. April S. Brown
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Yi, C., Metzger, R.A. & Brown, A.S. The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors. J. Electron. Mater. 31, 841–847 (2002). https://doi.org/10.1007/s11664-002-0193-5

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  • DOI: https://doi.org/10.1007/s11664-002-0193-5

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