Abstract
The history of power electronic semiconductor devices is reviewed that leads to a discussion of new materials. The wide bandgap and good thermal conductivity of SiC permit its use at high temperatures, and the high electric field breakdown is favorable for high power devices. However, there remain a number of key problems with SiC semiconductor technology that must be solved before reliable production can begin. Difficulties with the insulator-to-SiC interface, SiC epitaxial material, passivation, doping, and stability of contacts drive viable device structures. One issue, the formation of electrical contacts, is described in more detail. In particular, the impact of SiC preparation procedures, surface roughness, and deposition conditions are discussed, e.g., variations in the chemical cleaning process affect the removal of overlayers and/or the roughneing of the SiC surface. Studies have shown that this cleaning or etching step can in turn affect device performance. At present, fabrication of the best quality contacts is interlinked with other material problems, and even to obtain adequately low resistivities, constraints are placed on the processing of devices.
Similar content being viewed by others
References
C.I. Harris and A.O. Konstantinov, Physica Scripta T79, 271 (1999).
http://www.liv.ac.uk/EEE/ssg/power.htm
N. Mohan, T.M. Undeland, and W.P. Robbins, Power Electronics: Converters, Applications and Design, 2nd edition (New York: Wiley, 1995).
P. Antognetti, editorl, Power Integrated Circuits (New York: McGraw-Hill, 1986).
B.K. Bose, editor, Power Electronics and Variable Frequency Drives: Technology and Applications (Piscataway, NJ: IEEE Press, 1997).
J. Kilby, Amer. Vac. Soc. Ann. Symp. Plenarytalk (New York: Amer. Vac. Soc., 1997).
A. Itoh and H. Matsunami, CRC Critical Rev. Solid state and Mater. Sci. 22, 111 (1997).
C.E. Weitzel, Mater. Sci. Forum 264–8, 907 (1998).
S.J. Pearton, F. Ren, R.J. Shul, J.C. Zolper, and A. Katz, Mater. Res. Soc. Conf. Proc. 468, 331 (1997).
V. Benda, J. Gowar, and D.A. Grant, Power Semiconductor Devices: Theory and Applications (Toronto, Canada: Wiley, 1999), p. 399.
http://www.cree.com/products/sic/sic.htm.
J.A. Cooper, Mater. Sci. Eng. B44, 387 (1997).
K. Hara, Mater. Sci. Forum 264–8, 901 (1998).
B.J. Baliga, IEEE Electron Dev. Lett. EDL-10, 455 (1989).
K.G. Irvine, Paper presented at the Spring Mater. Res. Soc. Mtg., San Francisco, CA, 1998).
K.J. Schoen, J.P. Hemming, J.M. Woodall, J.A. Cooper, Jr., and M.R. Melloch, IEEE Electron Dev. Lett. 19, 97 (1998).
K. Xie, J. Zhao, J. Flemish, T. Burke, W. Buchwald, G. Lorenzo, and H. Singh, IEEE Electron Dev. Lett. 17, 142 (1996).
S. Seshadri et al., IEEE Device Res. Conf. Proc. (Piscataway, NJ: IEEE, 1997), p. 36.
R.R. Siergiej et al. (Paper presented at the 24th Int. Symp. on Compound Semicond., San Diego, CA, Sept. 1997).
A. Agarwal et al., Mater. Sci. Forum 264–8, 989 (1998).
J.W. Palmour and R. Singh, Proc. ISPSD (Publisher's City: Publishing Company Name, 1997).
J.B. Casady et al., IEEE Device Res. Conf. Proc. (Piscataway, NJ: IEEE, 1997), p. 32.
J. Spitz et al. (Late news paper presented at the IEEE Device Res. Conf., Ft. Collins, CO, June 1997).
D. Peters, R. Schorner, P. Friedrichs, J. Volkl, H. Mitlehner, and D. Stephani, IEEE Trans. Electron Dev. 46, 542 (1999).
L.S. Rea, Mater. Res. Soc. Conf. Proc. 423, 3 (1996).
N. Ramungul, T.P. Chow, M. Ghezzo, J. Kretchmer, and W. Hennessy, 1996 Ann. Dev. Res. Conf. Dig. 56–7 (Publisher's City: Publishing Company Name, 1996).
B.J. Baliga, IEEE Trans. on Electron Dev. 38, 1568 (1991).
V. Saxena, J.N. Su, and A.J. Steckl, IEEE Trans. Electron Dev. 46, 456 (1999).
Q. Wahab, T. Kimoto, A. Ellison, C. Hallin, M. Tuominen, R. Yakimova, A. Henry, J.P. Bergman, and E. Janzen, Appl. Phys. Lett. 72, 445 (1998).
L. Porter and R. Davies, Mater. Sci. & Eng. B (1995).
J. Crofton, L.M. Porter, and J.R. Williams, Pohys. Stat. Sol. (1997).
J. Kriz, T. Scholz, K. Gottfried, J. Leibelt, C. Kaufmann, and T. Gessner, Mater. Sci. Forum, ICSCIII-N '97, vols. 264–268 (1998), p. 775.
I. Valsov, A. Lyalin, E. Obraztsova, A. Simakin, and G. Shafeev, Quantum Electron. 28, 673 (1998).
T. Marinova, L. Kassamakova, S. Cassette, C. Brylinski, B. Pecz, and G. Radnoczi, Mater. Sci. and Eng. B46 223 (1997).
D. Alok, B.J. Baliga, and P.K. McLarty, IEDM Technical Digest (1993), pp. 691–694.
A.K. Chadda, J.D. Parsons, and G.B. Kruaval, Appl. Phys. Lett. 66, 760 (1995).
S.-K. Lee, C.-M. Zetterling, E. Danielsson, M. Östling, J.-P. Palmquist, H. Högberg, and U. Jansson, Appl. Phys. Lett. 77, 1478 (2000).
T. Jang, L.M. Porter, G.W.M. Rutsch, and B. Odekirk, Appl. Phys. Lett. 75, 3956 (1999): and T. Jang, B. Odekirk, L.D. Madsen, and L.M. Porter, J. Appl. Phys. (in press).
S. Liu and J.D. Scofield, Mater. Sci. Forum 264, 791 (1998).
L. Kassamakova, R. Kakanakov, N. Nordell, and S. Savage, Mater. Sci. Forum 264–268, 78 (1998).
L. Kassamakova, R. Kakanakov, N. Nordell, S. Savage, B. Hjörvarsson, E.B. Svedberg, L. Åbom, and L.D. Madsen, IEEE Trans. Electron. Dev. 46, 605 (1999).
N.A. Papanokolaou, A. Eduards, M.V. Rao, and W.T. Anderson, Appl. Phys. Lett. 73, 2009 (1998).
T.N. Oder, J.R. Williams, M. Bozack, V. Iyer, S.E. Mohney, and J. Crofton, J. Electron. Mater. 27, 324 (1998).
T.N. Oder, J.R. Williams, S.E. Mohney, and J. Crofton, J. Electron. Mater. 27, 12 (1998).
K. Tone, S.R. Weiner, and J.H. Zhao, Mater. Sci. Forum 264–268, 689 (1998).
T. Uemoto, Jpn. J. Appl. Phys. 34, L7 (1995).
B. Pecz, G. Radnóczi, S. Cassette, C. Brylinski, C. Arnodo. and O. Noblanc, Diamond Mater. (1997).
M.G. Rastegaeva, A.N. Andreev, A.A. Petrov, A.I. Babinin, M.A. Yagovkina, and I.P. Nikitinal, Mater. Sci. and Eng. B46, 254 (1997).
L.D. Madsen, E.B. Svedberg, H.H. Radamson, C. Hallin, B. Hjörvarsson, C. Cabral, Jr., J.L. Jordan-Sweet, and C. Lavoie, Mater. Sci. Forum 264–268, 799 (1998).
K. Robbie, S.T. Jemander, N. Lin, C. Hallin, R. Erlandsson, G.V. Hansson, and L.D. Madsen, accepted Phys. Rev. B (2001); K. Robbie, S.T. Jemander, N. Lin, R. Erlandsson, G.V. Hansson, and L.D. Madsen, Mater. Sci. Forum 338–342, 981 (2000).
E.D. Luckowski, J.R. Williams, M.J. Bozack, T. Isaacs-Smith, and J. Crofton, Mater. Res. Soc. Symp. Proc. 423, 119 (1996).
C.Y. Chang and S.M. Sze, ULSI Technology (New York: McGraw-Hill, 1996).
M.J. Bozack, Phys. Stat. Sol. B202, 549/580 (1997).
W. Kern and D.A. Puotinen, RCA Rev. 197 (1970).
N.V. Edwards, K. Järrendahl, D.E. Aspnes, K. Robbie, G.D. Powell, C. Cobet, N. Esser, W. Richter, and L.D. Madsen, Surf. Sci. Lett. 464, L703 (2000); N.V. Edwards, L.D. Madsen, K. Robbie, G. Powell, K. Järrendahl, C. Cobet, N. Esser, W. Richter, and D.E. Aspnes, Mater. Sci. Forum 338–342, 1033 (2000).
Q. Wahab, private communication (1999).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Madsen, L.D. Formation of ohmic contacts to α-SiC and their impact on devices. J. Electron. Mater. 30, 1353–1360 (2001). https://doi.org/10.1007/s11664-001-0124-x
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-001-0124-x