Abstract
We report the Schottky performance and thermal reliability of a wide bandgap InGaP layer in contact with a Cu/Au metallic system. An effective Schottky barrier height of 0.97 eV and an ideality factor of 1.21 can be achieved. The thermal reliability of the resultant Schottky barrier diodes was analyzed using Auger electron spectroscopy and atomic force microscopy. The thermal reliability could be main tained up to 450°C. The failure mechanism was attributable to the decomposition of the InGaP layer and the interdiffusion of the chemical elements at higher temperature. Insensitive photoresponsivity with the in cident optical power was found for the resultant Au/Cu-metal-semiconductor-metalphotodetectors (MSM-PDs). According to the measured temporal response of the Au/Cu-MSM-PDs, the operation frequency could be above 10 GHz.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J.R. Lothian, J.M. Kuo, F. Ren, and S.J. Pearton, J. Electron. Mater. 21, 441 (1992).
J.H. Burroughnes, IEEE Photon. Technol. Lett. 3, 660 (1991).
J. Burm, K.I. Litvin, D.W. Woodard, W.J. Schaff, P. Mandeville, M.A. Jaspan, M.M. Gitin, and L.F. Eastman, IEEE J. Quantum Electron. 31, 1504 (1995).
C.D. Tsai, H.P. Shiao, C.T. Lee, and Y.K. Tu, IEEE Photon. Technol. Lett. 9, 660 (1997).
T. Oka, K. Ouchi, K. Mochizuki, and T. Nakamura, Solid State Electron. 41, 1611 (1997).
D.A. Ahmair, G. Raghavan, Q.J. Hartmann, M.L. Hattendorf, M. Feng, and G.E. Stillman, IEEE Trans. Electron Devices. 46, 634 (1999).
S.S. Lu and C.C. Huang, IEEE Electron Device Lett. 13, 214 (1992).
H.P. Shiao, C.Y. Wang, Y.K. Tu, W. Lin, and C.T. Lee, Solid State Electron. 38, 2001 (1995).
C.T. Lee, H.P. Shiao, N.T. Yeh, C.D. Tsai, Y.T. Lyu, and Y.K. Tu Solid State Electron. 41, 1 (1997).
C.T. Lee, C.H. Lan, and C.D. Tsai, Solid State Electron, 41, 1715 (1997).
C.T. Lee, C.H. Fu, C.D. Tasi, and W. Lin, J. Electron. Mater. 27, 1017 (1998).
C.D. Tasi, C.H. Fu, Y.J. Lin, and C.T. Lee, Solid state Electron. 43, 665 (1999).
H.K. Liou, J.S. Huang, and K.N. Tu, J. Appl. Phys. 77, 5443 (1995).
M.S. Tyagi, Metal-Semiconductor Shottky Barrier Junction and Their Applications, ed. B.L. Sharma (New York: Plenum Press, 1984), pp. 20–21.
K. Shiojima, K. Nishimura, T. Aoki, and F. Hyuga, J. Appl. Phys. 77, 390 (1995).
K.D. Li, Application Note 1, Insights into High-Speed Detectors and High-Frequency Techniques (Santa Clara, CA: New Focus Inc. 1991), pp. 1–8.
S.D. Kwon, H.K. Kwon, and B.D. Choe, J. Appl. Phys. 78, 1482 (1995).
B.J. Van Zeghbroeck, W. Pattrick, J.M. Halbout, and P. Vettiger, IEEE Elctron Device Lett. 9, 527 (1988).
R.H. Yuang, J.L. Shieh, J.I. Chyi, and J.S. Chen, IEEE Photon. Technol. Lett. 9, 226 (1997).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Tsai, CD., Lee, CT. Thermal reliability and performances of InGaP schottky contact with Cu/Au and Au/Cu-MSM photodetectors. J. Electron. Mater. 30, 59–64 (2001). https://doi.org/10.1007/s11664-001-0100-5
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-001-0100-5