Abstract
InAs islands self-assembled on InAlAs layers lattice mismatched on GaAs substrates have been grown by molecular beam epitaxy. Both pseudomorphic and metamorphic InAlAs buffer layers were used as a template to investigate the effects of strain relaxation on the formation of the islands. The effect of alloy composition in the metamorphic templates is shown on the density and the shape of the islands. The present observations confirms the reduction of surface mass transport due to aluminum in the buffer layers.
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Cordier, Y., Miska, P. & Ferre, D. Effects of mismatch strain and alloy composition on the formation of InAs islands on InAlAs templates. J. Electron. Mater. 30, 453–458 (2001). https://doi.org/10.1007/s11664-001-0082-3
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DOI: https://doi.org/10.1007/s11664-001-0082-3