Skip to main content
SpringerLink
Log in

Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

  • Regular Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

We have investigated the effect of high-temperature annealing on device performance of GaInP/GaAs HBTs using a wide range of MOVPE growth parameters for the C-doped base layer. Carbon doping was achieved either via TMG and AsH3 only or by using an extrinsic carbon source. High-temperature annealing causes degradation of carbon-doped GaAs in terms of minority carrier properties even at doping levels of p=1 × 1019 cm−3. The measured reduction in electron lifetime and luminescence intensity correlates with HBT device results. It is shown that the critical temperature where material degradation starts is both a function of doping method and carbon concentration.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. B.T. Cunningham, L.J. Guido, J.E. Baker, J.S. Major, Jr., N. Holonyak, Jr., and G.E. Stillman, Appl. Phys. Lett. 55, 687 (1989).

    Article  CAS  Google Scholar 

  2. R. Rahbi, B. Pajot, J. Chevalier, A. Marbeuf, R.C. Logan, and M. Gavand, J. Appl. Phys. 73, 1723 (1993).

    Article  CAS  Google Scholar 

  3. C.R. Abernathy and F. Ren, Mater. Sci. and Engg. B28, 232 (1994).

    Article  Google Scholar 

  4. O. Ueda, A. Kawando, T. Takahashi, T. Tomioka, T. Fujii, and S. Sasa, Sol. State Electron. 41, 1605 (1997).

    Article  CAS  Google Scholar 

  5. M. Kozuch, M. Stavola, S.J. Pearton, C.R. Abernathy, and W.S. Hobson, J. Appl. Phys. 73, 3716 (1993).

    Article  CAS  Google Scholar 

  6. S.A. Stockman, A.W. Hanson, S.L. Jackson, J.E. Baker, and G.E. Stillman, Appl. Phys. Lett. 62, 1248 (1993).

    Article  CAS  Google Scholar 

  7. E. Richter, P. Kurpas, M. Sato, M. Trapp, U. Zeimer, S. Hdhle, and M. Weyers, Mater. Sci. and Engg. B44, 337 (1997).

    Article  CAS  Google Scholar 

  8. Q.J Hartmann, H. Hwangbo, A. Yung, D.A. Ahmari, M.T. Fresina, J.E. Baker, and G.E. Stillman, Appl. Phys. Lett. 68, 982 (1996).

    Article  CAS  Google Scholar 

  9. S. Nozaki, K. Takahashi, M. Shirahama, K. Nagao, J. Shirakashi, and E. Tokumitsu, Appl. Phys. Lett. 62, 1913 (1993).

    Article  CAS  Google Scholar 

  10. J. Wagner, R.C. Newman, B.R. Davidson, S.P. Westwater, T.J. Bullough, T.B. Joyce, and S. Öberg, Phys. Rev. Lett. 78, 74 (1997).

    Article  CAS  Google Scholar 

  11. Q. Yang, P. Meyer, H.C. Kuo, Q. J. Hartman, J. E. Baker, D. Scott, and G.E. Stillman (Paper presented at the 25th ISCS, Nara, Japan, 1998).

  12. F. Alexandre, D. Zerguine, P. Launy, J.L. Benchimol, B. Berz, B. Sermage, D. Komatitsch, and M. Juhel, J. Cryst. Growth 136, 235 (1994).

    Article  CAS  Google Scholar 

  13. H.K. Yow, P.A. Houston, C.C. Button, J.P.R. David, and C.M.S. Ng, J. Electron. Mater. 27, 17 (1998).

    CAS  Google Scholar 

  14. R. Driad, F. Alexandre, M. Juhel, and P. Launay, J. Vac. Sci. Technol. B14, 3509 (1996).

    Google Scholar 

  15. T.J. de Lyon, J.M. Woodall, M.S. Goorsky, and P.D. Kirchner, Appl. Phys. Lett. 56, 1040 (1990).

    Article  Google Scholar 

  16. R.E. Welser, N. Pan, D.P. Vu, P.J. Zampardi, and B.T. McDermott, IEEE Trans. Electron Devices 46, 1599 (1999).

    Article  CAS  Google Scholar 

  17. C.M. Colomb, S.A. Stockman, N.F. Gardner, A.P. Curtis, G.E. Stillman, T.S. Low, D.E. Mars, and D.B. Davito, J. Appl. Phys. 73, 7471 (1993).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Str. 11, 12489, Berlin

    F. Brunner, E. Richter, T. Bergunde, I. Rechenberg, A. Bhattacharya, A. Maassdorf, P. Kurpas, M. Achouche, J. Würfl & M. Weyers

  2. Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489, Berlin

    J. W. Tomm

Authors
  1. F. Brunner
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. E. Richter
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. Bergunde
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. I. Rechenberg
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. Bhattacharya
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. Maassdorf
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. J. W. Tomm
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. P. Kurpas
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. M. Achouche
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. J. Würfl
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. M. Weyers
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Brunner, F., Richter, E., Bergunde, T. et al. Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE. J. Electron. Mater. 29, 205–209 (2000). https://doi.org/10.1007/s11664-000-0143-z

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-000-0143-z

Key words

Search

Navigation