Abstract
We report flicker noise measurements combined with deep-level transient spectroscopy of the doped and undoped channel GaN/AlGaN heterostructure field-effect transistors. The low-temperature noise spectra for the doped devices show clear generation-recombination peaks. The value of the activation energy extracted from these noise peaks is consistent with the activation energies measured using deep-level spectroscopy. Our results indicate that the input-referred noise spectral density of the undoped channel devices is much smaller (up to two orders of magnitude) than that of the doped channel devices with comparable electric characteristics. The additional defects due to doping add up to the generation-recombination and flicker noise.
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S.J. Cai, R. Li, Y.L. Chen, L. Wong, W.G. Wu, S.G. Thomas, and K.L. Wang, Electron. Lett. 34, 2354 (1998).
A. Balandin, S. Cai, R. Li, K.L. Wang, V. Ramgopal Rao, and C.R. Viswanathan, IEEE Electron Device Lett. 19, 475 (1998).
A. Balandin, S.V. Morozov, S. Cai, R. Li, K.L. Wang, G. Wijeratne, and C.R. Viswanathan, IEEE Trans. Microwave Theory and Tech. 47, 1413 (1999).
J. Chang, A.A. Abidi, and C.R. Viswanathan, IEEE Trans. Elec. Devices 41, 1965 (1994).
W.Y. Ho, C. Surya, K.Y. Tong, W. Kim, A. E. Bochkarev, and H. Markoc, IEEE Trans. Elec. Devices 46, 1099 (1999).
N.V. Dyakonova and M.E. Levinshtein, Sov. Phys. Semicond. 23, 175 (1989).
A.L. McWhorter, Semiconductor Surface Physics, ed. R.H. Kingston (Philadelphia, PA: Univ. of Pennsylvania Press, 1957), p. 207.
A. Balandin, K.L. Wang, A. Svizhenko, and S. Bandyopadhyay, IEEE Trans. Elec. Devices 46, 1240 (1999).
A. van der Ziel, Proc. IEEE 76, 233 (1988).
A. Balandin, S. Morozov, G. Wijeratne, S.J. Cai, R. Li, J. Li, K.L. Wang, C.R. Viswanathan, and Yu. Dubrovskii, Appl. Phys. Lett. 75, 2064 (1999).
M.E. Levinshtein, F. Pascal, S. Contreras, W. Knap, S.L. Rumyantsev, R. Gaska, J.W. Yang, and M.S. Shur, Appl. Phys. Lett. 72, 3053 (1998).
D.V. Kuksenkov, H. Temkin, R. Gaska, and J.W. Yang, IEEE Electron. Device Lett. 19, 222 (1998).
A. Bykhovski, B. Gelmont, and M. Shur, J. Appl. Phys. 74, 6734 (1993).
A. Bykhovski, B. Gelmont, and M. Shur, J. Appl. Phys. 81, 6332 (1997).
C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M.D. Bremser, and R.F. Davis, Appl. Phys. Lett. 74, 3833 (1999).
P.M. Asbeck, E.T. Yu, S.S. Lau, G.J. Sullivan, J. Van Hove, and J. Redwing, Electron. Lett. 33, 1230 (1997).
J.R. Kirtley, T.N. Theis, P.M. Mooney, and S.L. Wright, J. Appl. Phys. 63, 1541 (1988); Y. Haddab, B. Deveaud, H.-J. Buhlmann, and M. Ilegems, J. Appl. Phys. 78, 2509 (1995).
C. Surya and T.Y. Hsiang, Phys. Rev. B 33, 4898 (1986).
F.D. Auret, S.A. Goodman, F.K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, Appl. Phys. Lett. 74, 407 (1999).
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Balandin, A., Wang, K.L., Cai, S. et al. Investigation of flicker noise and deep-levels in GaN/AlGaN transistors. J. Electron. Mater. 29, 297–301 (2000). https://doi.org/10.1007/s11664-000-0066-8
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DOI: https://doi.org/10.1007/s11664-000-0066-8