Interfaces in MoSi₂-SiC In Situ composites synthesized by melt processing

Abstract

Interfaces between the primary β-SiC and the surrounding MoSi₂ matrix in melt-synthesized in situ composites have been investigated, with emphasis on the chemistry and crystallographic relationships developed during solidification. Primary SiC growth occurs with {002} and {111} facets, both of which are found to template the subsequent nucleation and epitaxial growth of the MoSi₂ matrix. Eight independent orientation relationships (ORs) were identified, involving the following combinations of planes:

$$\begin{gathered} \left\{ {002} \right\}_{Sic} \parallel \left( {001} \right)_{MoSi_2 } \left( {3 rotational variants} \right), or \{ 101)_{MoSi_2 } \hfill \\ \left\{ {111} \right\}_{Sic} \parallel (001)_{MoSi_2 } , or \{ 100)_{MoSi_2 } \left( {2 rotational variants} \right),or \{ 101)_{MoSi_2 } \hfill \\ \end{gathered} $$

The interfacial relationships were rationalized using coincident site lattice arguments as well as energetic simulations based on the Grey-Bohr algorithm. The latter analysis suggests that the multiplicity of relationships arises from local effects associated with the size and shape of the adsorbate layers preceding the formation of the MoSi₂ nuclei. An amorphous carbon layer, 2- to 5-nm thick, was detected at all interfaces and some of the matrix grain boundaries. This interphase is believed to evolve by solid-state precipitation of C during postsolidification cooling and is, in principle, metastable. The C interphase enables easy debonding and thus may have important implications for the mechanical performance of materials involving SiC/MoSi₂ constituents.