Abstract
The present investigation was undertaken to elucidate the microstructural evolution of MoSi2-SiC in situ composites produced by melt processing. An assessment of the existing liquidus projection was performed by a combination of thermodynamic modeling, analysis of solidification microstructures, and measurements of the thermal history during solidification. Results show that the quasibinary MoSi2-SiC eutectic occurs at ∼2 at. pct C and 2283 K, rather than 8 at. pct C and 2173 K, as previously reported. The ensuing L+MoSi2+SiC monovariant line runs almost parallel to the SiMoSi2 binary and terminates at a ternary L ↔ Si+MoSi2+SiC eutectic calculated at 1.5Mo-0.84C (at. pct) and ∼1670 K. The maximum amount of SiC that may be produced by solidification along the quasibinary isopleth is ∼37 vol pct, of which ∼35 vol pct grows as primary. Analysis of solidification microstructures shows SiC grows with the cubic β polytype structure (B3), while MoSi2 grows with the tetragonal C11 b structure. Primary SiC may grow as equiaxed particles, platelets, and hopper crystals. Coupled growth with MoSi2 leads to SiC in the shape of thin ribbons, sheets, and needles. The facets of the SiC crystals were identified to be of the {111} and {002} type, in agreement with the periodic bond chain analysis. The predominant platelike morphology was shown to develop due to a re-entrant twin mechanism similar to that observed in Si and Ge.
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Tilly, D.J., Löfvander, J.P.A. & Levi, C.G. Solidification paths and carbide morphologies in melt-processed MoSi2-SiC In Situ composites. Metall Mater Trans A 28, 1889–1900 (1997). https://doi.org/10.1007/s11661-997-0119-1
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DOI: https://doi.org/10.1007/s11661-997-0119-1