Abstract
The ductile–brittle transition of nano/microscale silicon is explored at low-temperature, high stress conditions. A pathway to eventual mechanism maps describing this ductile–brittle transition behavior using sample size, strain rate, and temperature is outlined. First, a discussion of variables controlling the BDT in silicon is given and discussed in the context of development of eventual modeling that could simultaneously incorporate all their effects. For description of energy dissipation by dislocation nucleation from a crack tip, three critical input parameters are identified: the effective stress, activation volume, and activation energy for dislocation motion. These are discussed individually relating to the controlling variables for the BDT. Lastly, possibilities for measuring these parameters experimentally are also described.
Similar content being viewed by others
References
J. Rabier, A. Montagne, J.M. Wheeler, J.L. Demenet, J. Michler and R. Ghisleni: Phys. Status Solidi, 2013, vol. 10, pp. 11-15.
P. Veyssière, J. Rabier, J.L. Demenet and J. Castaing: Deformation of Ceramic Materials II, Plenum Press, New York, 1984, pp. 37-47.
J. Rabier, L. Pizzagalli and J.L. Demenet: Dislocat. Solids, 2010, vol. 16, pp. 47-108.
K. Yasutake, S. Shimizu, M. Umeno and H. Kawabe: J. Appl. Phys., 1987, 61: 940-46
P.B Hirsch, S.G. Roberts and J.F. Nye: Philos. Trans. R. Soc. A, 1997, vol. 355, pp. 1991-2002.
W.M. Mook, J.D. Nowak, C.R. Perrey, C.B. Carter, R. Mukherjee, S.L. Girshick, P.H. McMurry and W.W. Gerberich: Phys. Rev. B, 2007, vol. 75, p. 214112.
F. Ostlund, K. Rzepiejewska-Malyska, K. Leifer, L.M. Hale, Y. Tang, R. Ballarini, W.W. Gerberich and J. Michler: Adv. Funct. Mater., 2009, vol. 19, pp. 2439-2444.
E. Bitzek and P. Gumbsch: Acta Mater., 2013, vol. 61, pp. 1394-1403.
W. Kang and M.T.A. Saif: Adv. Funct. Mater., 2013, vol. 23, pp. 713-719.
A.J. Wagner, E.D. Hintsala, P. Kumar, W.W. Gerberich and K.A. Mkhoyan: Acta Mater., 2015, vol. 100, pp. 256-65.
D.-M. Tang, C.-L. Ren, M.-S. Wang, X. Wei, N. Kawamoto, C. Liu, Y. Bando, M. Mitome, N. Fukata and D. Golberg (2012) Nano Lett, 12: 1898-1904.
Y. Zhu, F. Xu, Q. Qin, W. Y. Fung and W. Lu: Nano Lett., 2009, vol. 9, pp. 3934-3939.
K. Zheng, X. Han, L. Wang, Y. Zhang, Y. Yue, Y. Qin, X. Zhang and Z. Zhang: Nano Lett., 2009, vol. 9, pp. 2471-2476.
S. Hoffmann, I. Utke, B. Moser, J. Michler, S.H. Christiansen, V. Schmidt, S. Senz, P. Werner, U. Gösele and C. Ballif: Nano Lett., 2006, vol. 6, pp.622-625.
G. Stan, S. Krylyuk, A. V. Davydov, I. Levin and R. F. Cook: Nano Lett., 2012, vol. 12, pp. 2599-2604
R. Hull, ed.: Properties of Crystalline Silicon, INSPEC, Exeter, England, 1999.
E. Hintsala, C. Teresi, A.J. Wagner, K.A. Mkhoyan and W.W. Gerberich: J. Mater. Res., 2013, vol. 29, pp.1513-1521.
H. Feng, Q.H. Fang, L.C. Zhang and Y.W. Liu: Int. J. Plast., 2013, vol. 42, pp. 50-64.
A.R. Beaber, J.D. Nowak, O. Ugurlu, W.M. Mook, S.L. Girshick, R. Ballarini and W.W. Gerberich: Philos. Mag., 2011, vol. 91, pp. 1179-1189.
P. Pirouz, J.L. Demenet and M.H. Hong: Philos. Mag. A, 2001, vol. 81, pp. 1207-1227.
A. George and G. Champier: Phys. Stat. Sol., 1979, vol. 53, pp. 529-540.
J.R. Patel, L.R. Testardi and P.E. Freeland: Phys. Rev. B, 1976, vol. 13, p. 3548-3557.
M.S.R.N. Kiran, T.T. Tran, L.A. Smillie, B. Haberl, D. Subianto, J.S. Williams and J.E. Bradby: J. Appl. Phys., 2015, vol. 117, p. 205901.
T. Ando, T. Takumi, S. Nozue and K. Sato: MEMS 2011 IEEE 24 Int. Conference, 2011, pp. 436–39.
D. Teirlinck, F. Zok, J.D. Embury and M.F. Ashby: Acta Metal., 1988, vol. 36, pp. 1213-1228.
C.E. Renshaw, N. Golding and E.M. Schulson: Cold Reg. Sci. Technol., 2014, vol. 97, pp. 1-6.
K. Kang and W. Cai: Int. J. Plast., 2010, vol. 26, pp. 1387-1401.
W.W. Gerberich, D.D. Stauffer, A.R. Beaber and N.I. Tymiak: J. Mater. Res., 2012, vol. 27, pp. 552-561.
J. Weertman and J.R. Weertman: Annu. Rev. Earth Planet. Sci., 1975, vol. 3, pp.293-315.
A.H. Cottrell and B.A. Bilby: Proc. Phys. Soc. A 62(1), 49 (1949).
Yamashita, Y., et al. Phys. Status Solidi(a) 171(1) (1999): 27-34.
H.R. Kolar, J.C.H. Spence and H. Alexander: Phys. Rev. Lett., 1996, vol. 11, pp. 4031-34.
Küsters, KH., and H. Alexander (1983) Physica B+C 116(1): 594-599.
T. Namazu, Y. Isono and T. Tanaka: J. (2002) Microelectromech. Syst., 11: 125-35.
B. Moser, K. Wasmer, L. Barbieri and J. Michler: J. Mater. Res., 2007, vol. 22, pp. 1004-1011.
W. W. Gerberich, J. Michler, W. M. Mook, R. Ghisleni, F. Ostlund, D. D. Stauffer and R. Ballarini: J.Mater. Res., 2004, vol. 24, pp. 898-906.
Kiener, D., and A. M. Minor. Nano letters 11.9 (2011): 3816-3820.
Frick, C. P., et al. Materials Science and Engineering: A 489.1 (2008): 319-329.
A.M. Minor, J.W. Morris Jr. and E.A. Stach: Appl. Phys. Lett., 2001, vol. 17, pp. 1625-1627.
Nelmes, R. J., and M. I. McMahon. Semiconductors and Semimetals 54 (1998): 177-180
Q. Wei, S. Cheng, K.T. Ramesh and E. Ma: Mater. Sci. Eng. A, 2004, vol. 381, 354-366.
Wheeler, J. M., et al. (2015) Curr. Opin. Solid State Mater. Sci. 19(6):354-366
Yu, Q., M. Legros, and A. M. Minor. MRS Bulletin 40.01 (2015): 62-70.
Ozdol, V. B., et al. Applied Physics Letters 106.25 (2015): 253107.
E. Bitzek, J.R. Kermode and P. Gumbsch: Int. J. Fract., 2015, vol. 191, pp. 13-30.
Acknowledgments
Parts of this work were carried out in the Characterization Facility and the Minnesota Nanocenter, University of Minnesota, which receives partial support from NSF through the MRSEC program. The authors would like to thank Hysitron for their support along with providing facilities for the high-temperature SEM testing. Research by the second author was performed under appointment of the Rickover Fellowship Program in Nuclear Engineering sponsored by the Naval Reactor Division of the U.S. Department of Energy.
Author information
Authors and Affiliations
Corresponding author
Additional information
Manuscript submitted April 15, 2016.
Rights and permissions
About this article
Cite this article
Hintsala, E., Teresi, C. & Gerberich, W.W. Linking Nanoscales and Dislocation Shielding to the Ductile–Brittle Transition of Silicon. Metall Mater Trans A 47, 5839–5844 (2016). https://doi.org/10.1007/s11661-016-3614-4
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11661-016-3614-4