Metallurgical and Materials Transactions A

, Volume 44, Issue 7, pp 2914–2916 | Cite as

Effect of Temperature on the Die Shear Strength of a Au-Sn SLID Bond

  • Torleif André Tollefsen
  • Ole Martin Løvvik
  • Knut Aasmundtveit
  • Andreas Larsson


The effect of temperature on the die shear strength of a optimized Au-Sn solid–liquid interdiffusion SLID bond, a reliable high temperature die attach and interconnect technology, was investigated. The shear strength was greatly reduced with temperature from 140 MPa at room temperature to 20 MPa at 573 K (300 °C). This reduction was unexpected since the melting point of a Au-Sn SLID bond is 795 K (522 °C). Fractographic studies revealed a change in fracture mode with increasing temperatures. This work emphasizes the importance of performing bond strength quantification at the intended application temperature.


  1. 1.
    Z. J. Shen, B. Grummel, R. McClure, A. Gordon, and A. Hefner: iMAPS HiTEC, Albuquerque, NM, 2008.Google Scholar
  2. 2.
    N. G. Wright, A. B. Horsfall, and K. Vassilevski: Mater. Today, 2008, vol. 11 (1-2), pp. 16-21.CrossRefGoogle Scholar
  3. 3.
    T. A. Tollefsen, A. Larsson, O. M. Løvvik, and K. Aasmundtveit: Metall. Mater. Trans B, 2012, vol. 43, pp. 397-405.CrossRefGoogle Scholar
  4. 4.
    T. A. Tollefsen, A. Larsson, and K. Aasmundtveit: iMAPS HiTEN, Oxford, UK, 2011.Google Scholar
  5. 5.
    T.A. Tollefsen, M.M.V. Taklo, K. Aasmundtveit, and A. Larsson: IEEE ESTC, Amsterdam, 2012.Google Scholar
  6. 6.
    W. R. Johnson, C. Q. Wang, Y. Liu, and J. D. Scofield: IEEE Trans. Electron. Packag. Manuf., 2007, vol. 30, pp. 182-193.CrossRefGoogle Scholar
  7. 7.
    P. Zheng, P. Henson, R. W. Johnson, and L. Chen: iMAPS HiTEC, Albuquerque, 2010.Google Scholar
  8. 8.
    K. Fang, R. Zhang, T. Isaacs-Smith, R. W. Johnson, E. Andarawis, and A. Vert: iMAPS HiTEN, Oxford, UK, pp. 39-45, 2011.Google Scholar
  9. 9.
    S. A. Yang and A. Christou: IEEE Trans. Device Mater. Reliab., 2007, vol 7, pp. 188-196.CrossRefGoogle Scholar
  10. 10.
    T.A. Tollefsen, M.M.V. Taklo, N. Lietaer, T. Bakke, P. Dalsjø, and J. Gakkestad: International Wafer Level Packaging Conference (IWLPC), San Jose, 2012.Google Scholar
  11. 11.
    R. Kirschman: High-Temperature Electronics, IEEE Press, New York, NY, 1999.Google Scholar
  12. 12.
    T. A. Tollefsen, A. Larsson, M. M. V. Taklo, A. Neels, X. Maeder, K. Høydalsvik, D. W. Breiby, and K. Aasmundtveit: Metall. Mater. Trans. B, 2013, vol. 44, pp. 406-413 .CrossRefGoogle Scholar
  13. 13.
    H. Okamoto: J. Phase Equilib. Diffus., 2007, vol. 28(5), p. 490.Google Scholar
  14. 14.
    H. S. Liu, C. L. Liu, K. Ishida, and Z. P. Jin: J. Electron. Mater., 2003, vol. 32, pp. 1290-1296.CrossRefGoogle Scholar
  15. 15.
    S.L. Shang, W.Y. Wang, Y. Wang, Y. Du, J.X. Zhang, A.D. Patel, and Z.K. Liu: J. Phys. Condensed Matter, 2012, vol. 24.Google Scholar
  16. 16.
    MatWeb: Material Property Data,
  17. 17.
    F. G. Yost, M. M. Karnowsky, W. D. Drotning, and J. H. Gieske: Metall. Trans. A, 1990, vol. 21, pp. 1885-1889.Google Scholar

Copyright information

© The Minerals, Metals & Materials Society and ASM International 2013

Authors and Affiliations

  • Torleif André Tollefsen
    • 1
    • 2
  • Ole Martin Løvvik
    • 3
    • 4
  • Knut Aasmundtveit
    • 2
  • Andreas Larsson
    • 1
  1. 1.SINTEF ICT InstrumentationOsloNorway
  2. 2.Institute for Micro and Nanosystems TechnologyVestfold University CollegeBorreNorway
  3. 3.SINTEF Materials and ChemistryOsloNorway
  4. 4.Department of PhysicsUniversity of OsloOsloNorway

Personalised recommendations