Abstract
The effect of annealing temperature on the crystallinity, thermoelectric properties, and surface morphology of the Bi0.5Sb1.5Te3 thin films prepared on SiO2/Si substrate by radio-frequency (RF) magnetron sputtering was investigated using X-ray diffraction (XRD), the four-point probe method, and scanning electron microscopy (SEM). XRD results show that the crystallite structure of the Bi x Sb2–x Te3 thin films belong to Bi0.5Sb1.5Te3. When the Bi x Sb2–x Te3 thin films were annealed between 423 K and 523 K (150 °C and 250 °C) for 10 minutes, the crystallinity of the thin films continuously increases with the temperature increase. In addition, the (015) reflection plane as the preferred orientation and the oxidation compound of Bi3.73Sb1.5O3 first appeared when the Bi0.5Sb1.5Te3 thin films were annealed at 523 K (250 °C) for 10 minutes. An activation energy of 51.66 kJ/mol for crystallite growth of Bi0.5Sb1.5Te3 thin films annealed between 423 K and 523 K (150 °C and 250 °C) for 10 minutes was obtained. The resistivity was 2.69 × 102 and 5.93 × 10 μΩ·m, respectively, for the as-deposited Bi0.5Sb1.5Te3 thin films and annealed at 523 K (250 °C) for 10 minutes. The maximum values of the Seebeck coefficient and power factor were 256.5 μV/K and 1.12 × 103 μW/m·K2, respectively, for the Bi0.5Sb1.5Te3 thin films annealing treatment at 523 K (250 °C) for 10 minutes.
Similar content being viewed by others
Notes
JEOL is a trademark of Japan Electron Optics Ltd., Tokyo.
References
R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. ÓQuinn: Nature, 2001, vol. 413, pp. 597–602.
T.C. Harman, P.J. Taylar, M.P. Walsh, and B.E. Laforge: Science, 2002, vol. 297, pp. 2229–32.
L.D. Hicks and M.D. Dresselhaus: Phys. Rev. B, 1993, vol. 47, pp. 12727–12731.
L.D. Hickes, T.C. Harman, and M.S. Dresselhaus: Appl. Phys. Lett., 1993, vol. 63, pp. 3230–32.
T. Gaillat, C.K. Huang, J.P. Fleurial, G.J. Snyder, and A. Borshchevskg: Proceedings of the 19th Internationl Conference on Thermoelectrics, ICT’00, IEEE, Cardiff, UK, 2000, pp. 151–154.
R. Venkatasubramanian and T. Colpitts: Mater. Res. Soc. Symposium Proc., T.M. Tritt, M.G. Manatgidis, H.B. Lyon Jr, and G.D. Mahan, ed., San Francisco, CA, 1997, vol. 478, pp. 73-84.
R. Venkatasubramanian, T. Colpitts, E. Watko, and D. Malta: Proc. 1st Nat. Thermogenic Cooler Workshop, S.B. Hon, ed., Center for Night Vision and Electro-Optics, Fort Belvoir, VA, 1992, pp. 196–231.
A. Shakouri and J.E. Bowers: Appl. Phys. Lett., 1997, vol. 71, pp. 1234–36.
G.D. Mahan and L.M. Woods: Phys. Rev. Lett., 1998, vol. 80, pp. 4016–19.
F. Volkein, V. Baier, U. Dillner, and E. Kessler: Thin Solid Films, 1990, vol. 187, pp. 253–62.
A. Foucaran, A. Sackda, A. Giani, F. P. Delannoy, and A. Boyer: Mater. Sci. Eng. B, 1998, vol. 52, pp. 154–61.
A. Dauscher, A. Thomy, and H. Scherrer: Thin Solid Films, 1996, vol. 280, pp. 61–66.
R.S. Makala, K. Jagannadham, and B.C. Cho: J. Appl. Phys., 2003, vol. 94, pp. 3907–18.
R. Venkatasubramanian, T. Colpitts, B. ÓQuinn, S. Liu, N. El-Masry, and M. Lamvik: Appl. Phys. Lett., 1999, vol. 75, pp. 1104–06.
R. Venkatasubramanian: U.S. Patent No. 6,071,351, June 6, 2000.
S. Cho, Y. Kim, A. Divenere, G.K. Wong, J.B. Ketterson, and J.R. Meyer: Appl. Phys. Lett., 1999, vol. 75, pp. 1401–03.
H. Horo, K. Sato, and H. Kagechika: J. Appl. Phys., 1993, vol. 73, pp. 1252–60.
K.H. Kim, E. Byon, G.H. Lee, and S. Cho: Thin Solid Films, 2006, vol. 510, pp. 148–53.
A. Giani, A. Boulouz, B. Aboulfarah, F. Pascal-Delannoy, A. Foucaran, A. Boyer, and A. Mzerd: J. Cryst. Growth, 1999, vol. 204, pp. 91–96.
D.M. Rowe: Thermoelectric Handbook: Micro to Nano, D.M. Rowe, ed., CRC Press, Taylor & Francis Group, FL, 2006, pp. 1–26.
J. Nurnus, H. Bottner, and A. Lambrecht: Proceedings of the 22nd International Conference on Thermoelectrics, ICT’03, IEEE, LaGrande Motte, France, 2003, pp. 655–60.
B.D. Cullity: Elements of X-ray Diffraction, Addison-Wesley, Reading, MA, 1978, p. 87.
T.R. Malow and C.C. Koch: Acta Mater., 1997, vol. 45, pp. 2177–86.
A. Giani, A. Foucaran, A. Sakda, F. Pascal-Delannoy, G. Belleville, and A. Boyer: 1997, vol. 29, pp. 177–82.
F. Mongellaz, A. Fillot, B. Griot, and J. De Lalĺce: Proc. SPIE 2227, Conf. on Cryogenic Optical Systems and Instruments VI, Orlando, FL, 1994, vol. 22, pp. 156–65.
N. Scoville, C. Baigar, J. Rolfe, J.-P. Fleurial, and J. Vandersande: Nano Structured Mater., 1995, vol. 5, pp. 207–23.
D.H. Kim and G.H. Lee: Mater. Sci. Eng. B, 2006, vol. 131, pp. 106–10.
W.D. Kingery: Introduction to Ceramics, John Wiley and Sons, Inc., New York, NY, 1996, p. 363.
Author information
Authors and Affiliations
Corresponding author
Additional information
Manuscript submitted May 24, 2012.
Rights and permissions
About this article
Cite this article
Lin, HJ., Kang, KJ., Hwang, JD. et al. Effect of Annealing Temperature on the Thermoelectric Properties of the Bi0.5Sb1.5Te3 Thin Films Prepared by Radio-Frequency Sputtering. Metall Mater Trans A 44, 2339–2345 (2013). https://doi.org/10.1007/s11661-012-1587-5
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11661-012-1587-5