Skip to main content
SpringerLink
Log in

Applications of X-Ray Characterization for Advanced Materials in the Electronics Industry

  • Symposium: Neutron and X-Ray Studies of Advanced Materials
  • Published:
Metallurgical and Materials Transactions A Aims and scope Submit manuscript

Abstract

Nanometer thick films, quantum dots, and quantum wires are the basis of the modern electronic industry. X-ray diffraction techniques play an increasingly important role as basic characterization tools for determining detailed structural information of ultrathin film such as the evolution of strain relaxation, defect formation, film/substrate interfacial properties, and the effects of the reduced dimensionality and structural correlations to electrical properties. Materials of technological interest are SiGe and strained Si; artificial substrates such as silicon on insulator; high- and low-κ dielectric materials, which will substitute SiO2; materials for interconnects; new materials for memory storage; micro-electro-mechanical systems (MEMS); and photovaltaics. An overview of the major X-ray scattering applications of interest to this industry will be presented in this article.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. A. Parikh, W. Yarbrough, M. Mason, S. Sridhar, P.R. Chidambaram, and Z. Cai: Appl. Phys. Lett., 2007, vol. 90, pp. 172117–172117-3 (3 pages).

  2. J.P. Dismukes, L. Ekstrom, and R.J. Paff: J. Phys. Chem., 1964, vol. 68, pp. 3021–27.

    Article  CAS  Google Scholar 

  3. T. Shiraiwa and N. Fujino: Jpn. J. Appl. Phys., 1966, vol. 5 (10), pp. 886–99.

    Article  CAS  ADS  Google Scholar 

  4. D. Laguitton and M. Mantler: Adv. X-ray Anal., 1977, vol. 20, pp. 515–28.

    CAS  Google Scholar 

  5. Baoping B. He and Kingsley L. Smith: Proc. 5th Int. Conf. on Residual Stresses (ICRS-5), Linkoping, Sweden, 1997.

  6. Paul R. Besser, Young-Chang Joo, Delrose Winter, Minh van Ngo, and Richard Ortega: Materials Research Society Symposia Proceedings, Materials Research Society, Pittsburgh, PA, 1999, vol. 563.

  7. H.J. Lee, C.L. Soles, D.W. Liu, B.J. Bauer, E.K. Lin, W. Wu, and A. Grill: J. Appl. Phys., 2004, vol. 95, pp. 2355–59.

    Article  CAS  ADS  Google Scholar 

Download references

Acknowledgments

We express our gratitude to Anita Madan, Judson Holt, and Eric Harley (IBM, Fishkill, NY), for providing some of the reference samples and very valuable discussions; Ulrich Waldschlaeger (Bruker AXS Microanalysis), for proving the necessary know how on μXRF; Jean Fompeyrine and Jean Pierre Locquet (IBM Zurich); and Christophe Detavernier (University of Ghent) for helpful discussions.

Author information

Authors and Affiliations

  1. Semiconductor Industry, Bruker AXS, 76187, Karlsruhe, Germany

    A. Vigliante (Head of Business Development), N. Kasper (Application Scientist) & J. Brechbuehl (Application Scientist)

  2. CEA-LETI-MINATEC, 38 054, Grenoble, France

    E. Nolot (Research Scientist)

Authors
  1. A. Vigliante
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. Kasper
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Brechbuehl
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. E. Nolot
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. Vigliante.

Additional information

This article is based on a presentation given in the symposium “Neutron and X-Ray Studies of Advanced Materials,” which occurred February 15–19, 2009, during the TMS Annual Meeting in San Francisco, CA, under the auspices of TMS, TMS Structural Materials Division, TMS/ASM Mechanical Behavior of Materials Committee, TMS: Advanced Characterization, Testing, and Simulation Committee, and TMS: Titanium Committee.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Vigliante, A., Kasper, N., Brechbuehl, J. et al. Applications of X-Ray Characterization for Advanced Materials in the Electronics Industry. Metall Mater Trans A 41, 1167–1173 (2010). https://doi.org/10.1007/s11661-009-0116-7

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11661-009-0116-7

Keywords

Search

Navigation