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Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated through Sol—Gel Method

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Abstract

Ag/La0.5Mg0.5MnO3/p+-Si resistance switching device for nonvolatile memory application was fabricated by sol-gel method. The thickness effects of La0.5Mg0.5MnO3 (LMMO) films on current-voltage (I–V) characteristics, resistance switching behaviour and endurance characteristics of Ag/LMMO/p+-Si device were investigated. The same crystallisation and phase structure were confirmed in the LMMO films with increased film thickness. The Ag/LMMO/p+-Si device exhibits the typical bipolar resistive switching behaviour. As the LMMO thickness and the stable repetition switching cycle numbers increase, VSet, and VReset of the device will increase, but the RHRS/RLRS will decrease. The Ag/LMMO/p+-Si device with 165 nm thick LMMO films exhibit the best performance, in which the RHRS/RLRS exceeds 104 for 1 000 switching cycles, and its degradation is invisible for more than 106 s.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China

    Shuaishuai Yan  (闫帅帅), Hua Wang  (王华), Jiwen Xu & Ling Yang

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  1. Shuaishuai Yan  (闫帅帅)
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  2. Hua Wang  (王华)
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  3. Jiwen Xu
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  4. Ling Yang
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Corresponding author

Correspondence to Hua Wang  (王华).

Additional information

Funded by the National Natural Science Foundation of China (No.51262003) and the Guangxi Natural Science Foundation (No. 2015GXNSFAA139253)

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Yan, S., Wang, H., Xu, J. et al. Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated through Sol—Gel Method. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 34, 568–571 (2019). https://doi.org/10.1007/s11595-019-2089-8

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  • DOI: https://doi.org/10.1007/s11595-019-2089-8

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