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Effects of Strains on Thermal Conductivity of Si/Ge Superlattices

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Abstract

The effect of strains on the thermal conductivity of Si/Ge superlattices was investigated by nonequilibrium molecular dynamics (NEMD) simulation. The thermal conductivities experienced a near linear drop with increasing tensile and compressive strains. It was explained by the fact that the decrease of the phonons velocities and a mass of structural defects generated under strains. Meanwhile, a theoretical calculation based on Modified-Callaway model was performed and it was found that the theoretical results were in good agreement with the molecular dynamics results.

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Authors and Affiliations

  1. College of Mechanical and Electrical Engineering, Northeast Forestry University, Harbin, 150040, China

    Xingli Zhang  (张兴丽) & Cuizhi Gong

  2. The State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian, 116024, China

    Guoqiang Wu

Authors
  1. Xingli Zhang  (张兴丽)
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  2. Cuizhi Gong
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  3. Guoqiang Wu
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Corresponding author

Correspondence to Xingli Zhang  (张兴丽).

Additional information

Supported by the National Natural Science Foundation of China (No. 51706039)

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Zhang, X., Gong, C. & Wu, G. Effects of Strains on Thermal Conductivity of Si/Ge Superlattices. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 33, 1051–1055 (2018). https://doi.org/10.1007/s11595-018-1933-6

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  • DOI: https://doi.org/10.1007/s11595-018-1933-6

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