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Effects of N2 pressure on the structural and electrical properties of tin films deposited by laser molecular beam epitaxy

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Abstract

Titanium nitride (TiN) films were deposited on Si(100) substrates by laser molecular beam epitaxy(LMBE), and their properties of structure and resistivity with varying N2 pressure were investigated. The results showed that atomically flat TiN films with layer-by-layer growth mode were successfully grown on Si(100) substrates, and (200) was the preferred orientation. With the increasing of N2 pressure, the N/Ti ratio gradually increased and the diffraction peak progressively shifted towards lower diffraction angle. At pressure of 0.1 Pa, stoichiometric TiN film was formed which exhibited the characteristic diffraction angle of (200) plane. All films showed high reflectance to infrared spectrum and the films with overstoichiometry and understoichiometry had a higher resistivity owing to the surface particles and lattice distortion, while the stoichiometric TiN film depicted the minimum resistivity, around 19 μΩ·cm.

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Authors and Affiliations

  1. Key Laboratory of New Processing Technology for Materials and Nonferrous Metal, Ministry of Education, College of Materials Science and Engineering, Guangxi University, Nanning, 530004, China

    Yuechun Fu  (符跃春), Shangsheng Xie, Xianghai Meng, Huan He & Xiaoming Shen

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  1. Yuechun Fu  (符跃春)
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  2. Shangsheng Xie
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  3. Xianghai Meng
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  4. Huan He
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  5. Xiaoming Shen
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Correspondence to Yuechun Fu  (符跃春).

Additional information

Funded by the Guangxi Natural Science Foundation (No. 0731005) and the Open Foundation of the Key Lab of New Processing Technology for Nonferrous Metals and Materials (No. 6XKFJ-06)

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Fu, Y., Xie, S., Meng, X. et al. Effects of N2 pressure on the structural and electrical properties of tin films deposited by laser molecular beam epitaxy. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 26, 823–826 (2011). https://doi.org/10.1007/s11595-011-0318-x

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  • DOI: https://doi.org/10.1007/s11595-011-0318-x

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