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Effect of the sputtering parameters on the structure and properties of Cu3N thin film materials

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Abstract

Copper nitride (Cu3N) thin films were successfully deposited on glass substrates by reactive radio frequency magnetron sputtering. The effects of sputtering parameters on the structure and properties of the films were studied. The experimental results show that with increasing of RF power and nitrogen partial pressure, the preferential crystalline orientation of Cu3N film is changed from (111) to (100). With increasing of substrate temperature from 70 °C to 200 °C, the film phase is changed from Cu3N phase to Cu. With increasing sputtering power from 80 W to 120 W, the optical energy decreases from 1.85 eV to 1.41 eV while the electrical resistivity increases from 1.45 ×102 Ω · cm to 2.99 × 103 Ω · cm, respectively.

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Authors and Affiliations

  1. School of Electronic Information & Electric Engineering, Changzhou Institute of Technology, Changzhou, 213002, China

    Xianyi Qian  (钱显毅)

  2. College ofPhysical Science and Technology, Cental China Normal University, Wuhan, 430079, China

    Zhixin Huang  (黄致新), Zengli Cui & Jihua Guo

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  1. Xianyi Qian  (钱显毅)
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  2. Zhixin Huang  (黄致新)
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  3. Zengli Cui
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  4. Jihua Guo
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Correspondence to Zhixin Huang  (黄致新).

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Funded by the National Natural Science Foundation of China (No. 60571010)

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Qian, X., Huang, Z., Cui, Z. et al. Effect of the sputtering parameters on the structure and properties of Cu3N thin film materials. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 25, 935–937 (2010). https://doi.org/10.1007/s11595-010-0123-y

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  • DOI: https://doi.org/10.1007/s11595-010-0123-y

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