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Spin-dependent transport through magnetic nanojunctions

  • Published:
Central European Journal of Physics

Abstract

Coherent electronic transport through a molecular device is studied using non-equilibrium Green's function (NEGF) formalism. Such device is made of atomic nanowire which is connected to ferromagnetic electrodes. The molecule itself is described with the help of Hubbard model (Coulomb interactions are treated by means of the Hartree-Fock approximation), while the coupling to the electrodes is modeled through the use of a broad-band theory. It was shown that magnetoresistance varies periodically with increasing length of the atomic wire (in the linear response regime) and oscillates with increasing bias voltage (in the nonlinear response regime). Since the TMR effect for analyzed structures is predicted to be large (tens of percent), these junctions seem to be suitable for application as magnetoresistive elements in future electronic circuits.

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Authors and Affiliations

  1. Institute of Physics, A. Mickiewicz University, Umultowska 85, 61-614, Poznań, Poland

    Kamil Walczak

  2. Departamento de Teoria de la Materia Condensada, Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049, Madrid, Spain

    Kamil Walczak & Gloria Platero

Authors
  1. Kamil Walczak
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  2. Gloria Platero
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Walczak, K., Platero, G. Spin-dependent transport through magnetic nanojunctions. centr.eur.j.phys. 4, 30–41 (2006). https://doi.org/10.1007/s11534-005-0004-8

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  • DOI: https://doi.org/10.1007/s11534-005-0004-8

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