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Accumulation of hydrogen in hafnium: Structure and electrical resistivity

  • Structure, Phase Transformations, and Diffusion
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Abstract

The structure and changes in the electrical resistivity of hafnium in the process of its electrolytic saturation with hydrogen have been studied at room temperatures. It has been established by X-ray diffraction that the surface layer in this case is enriched with a nonstoichiometric HfH2−x hydride (δ phase) whose concentration decreases fast with depth. A solid solution of hydrogen in hafnium has been found. The realization of a uniform distribution of the concentration of hydrogen and the hydride over the sample volume is retarded by a low mobility of hydrogen in the hafnium hydride and a weak solubility of hydrogen in hafnium. At the attained values of x, the resistivity of the hydride is higher than the resistivity of the initial hafnium.

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Authors and Affiliations

  1. Institute of Solid-State Physics, Materials Science, and Technologies, Kharkov Physicotechnical Institute, National Scientific Center, ul. Akademicheskaya 1, Khar’kov, 61108, Ukraine

    R. V. Azhazha & K. V. Kovtun

  2. Karazin Kharkov National University, pl. Svobody 4, Kharkov, 61077, Ukraine

    B. A. Merisov & G. Ya. Khadzhai

  3. Kharkov Politechnical Institute—National Technical University, ul. Frunze 21, Kharkov, 61102, Ukraine

    S. V. Malykhin, A. T. Pugachev & E. N. Reshetnyak

Authors
  1. R. V. Azhazha
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  2. K. V. Kovtun
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  3. S. V. Malykhin
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  4. B. A. Merisov
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  5. A. T. Pugachev
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  6. E. N. Reshetnyak
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  7. G. Ya. Khadzhai
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Additional information

Original Russian Text © R.V. Azhazha, K.V. Kovtun, S.V. Malykhin, B.A. Merisov, A.T. Pugachev, E.N. Reshetnyak, G.Ya. Khadzhai, 2008, published in Fizika Metallov i Metallovedenie, 2008, Vol. 105, No. 2, pp. 201–205.

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Azhazha, R.V., Kovtun, K.V., Malykhin, S.V. et al. Accumulation of hydrogen in hafnium: Structure and electrical resistivity. Phys. Metals Metallogr. 105, 188–192 (2008). https://doi.org/10.1007/s11508-008-2011-7

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  • DOI: https://doi.org/10.1007/s11508-008-2011-7

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