D-M-D Plasmonic Anti-Reflector for Next-Generation Thin c-Si Solar Cell Applications
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In this paper, focus is on the light trapping surface in crystalline silicon (c-Si) solar cells where thinner c-Si wafers are expected to be used by industry to reduce the cost of cell manufacturing. Currently, 180-μm-thick wafers are being used for fabricating c-Si solar cells where textured surface coated with silicon nitride (SiN x ) anti-reflector enhances the light trapping. However, surface texturing process roughens the surface and increases the probability of more surface recombination as the wafer thickness decreases. This paper presents an analytical analysis for the development of plasmonic anti-reflector as an alternative to traditional texturization for next-generation thin c-Si solar cells. The analysis indicates that loss in current generation due to Si wafer thickness reduction up to 100 μm from currently used 180 μm would not be more than 0.5 mA/cm2 if the light trapping structure is excellent. A 100-μm wafer thickness reduction would increase the front escape of light but not more than 1%. PC1D simulation incorporating experimental reflectance from an equivalent 100-μm thin c-Si wafer-based solar cell structure having proposed dielectric-metal-dielectric (D-M-D)-based anti-reflector indicates 1.2–1.3 mA/cm2 current enhancement when compared with a standard SiN x anti-reflector.
Keywordsc-Si solar cell Plasmonic anti-reflector Texturization Light trapping Thin c-Si wafer
This work has been carried out at the National Centre for Photovoltaic Research and Education (NCPRE), IIT-Bombay supported by the “Ministry of New Renewable Energy (MNRE), Government of India.” The authors would like to acknowledge Sandeep Kumbhar, Dr. S. Saravanan, Anzar Gani, and other colleagues at NCPRE for their help in fabrication. The authors would also like to acknowledge Dr. Aldrin Antony for discussion and support in deposition of silicon oxynitride (SiON). One of the authors acknowledges MNRE for funding AMANSI project. Authors also acknowledge IIT Bombay Nanofabrication Facility (IITBNF) and the faculty members (Prof. Anil, Prof. B.M. Arora, and Prof. K.L. Narasimhan, Prof. J. Vasi) as well as the staff members for their great team work and support.
- 2.Aberle AG (2000) Surface passivation of crystalline silicon solar cells: a review. Prog Photovolt Res Appl 8:473–487. doi: 10.1002/1099-159X(200009/10)8:5<473::AID-PIP337>3.0.CO;2-D CrossRefGoogle Scholar
- 4.Haynos J, Allison J, Arndt R, Meulenberg A (1974) The COMSAT nonreflective silicon solar cell: a second generation improved cell. In: Int. Conf. Photovolt. Power Gener p 18Google Scholar
- 5.www.itrpv.net/Reports/Downloads/2014/ (2014) International Technology Roadmap for Photovoltaic (ITRPV) 2013 Results
- 7.Plummer JD, Deal MD, Griffin PB (2000) Silicon VLSI technology: fundamentals, practice and modelingGoogle Scholar
- 10.Standard IEC 60904-3 (2008) Measurement principles for terrestrial PV solar devices with reference spectral irradiance data. Int. Electrochem. CommGoogle Scholar
- 11.PC1D 5.9 PC1D (ver 5.9)- Software for modelling a solar cellGoogle Scholar
- 21.Lolgen P, Leguijt C, Eikelboom JA, et al (1993) Aluminium back-surface field doping profiles with surface recombination velocities below 200 cm/s. In: Conf. Rec. Twenty Third IEEE Photovolt. Spec. Conf. - 1993 (Cat. No.93CH3283–9). IEEE, pp 236–242Google Scholar
- 25.Dekkers HFW, Duerinckx F, Wolf S De, et al (2003) The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride. In: Proc. 3rd World Conf. onPhotovoltaic Energy Conversion, 2003. pp 1143–1146Google Scholar