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Plasmonics

, Volume 11, Issue 5, pp 1279–1283 | Cite as

Direct Electrodeposition of Hollowed Ag Nanostructures on ITO Glass for Reproducible SERS Application

  • Xudong Cheng
  • Juncao Bian
  • Zhengfeng Huang
  • Zhaoguo Zhang
  • Peimei Dong
  • Qingli Wang
  • Yi Chen
  • Yanzhao Zhang
  • Xiwen ZhangEmail author
Article

Abstract

Hollowed Ag nanostructures are, for the first time, electrodeposited on ITO glass without use of surfactant. The hollowed Ag nanostructure was investigated via a collaboration of scanning electron microscopy (SEM), XRD, X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), XRD, and UV-vis. Results exhibited that the formation of the hollowed Ag nanostructure can be interpreted as the synergy effect of twin defect and low nucleation driving force. Surface-enhanced Raman scattering (SERS) spectra of rhodamine 6G and adenine molecules adsorbed on the surface of these Ag nanostructures were recorded. The smallest RSD of 1651 cm−1 Raman bands of rhodamine 6G was 14.7 %, indicating that the hollowed Ag nanostructures can be utilized for reproducible SERS application. Through comparison, it was found the good crystallinity was beneficial for SERS.

Keywords

Hollowed Ag nanostructure Twin defect Electrodeposition SERS Reproducibility 

Notes

Acknowledgments

This work was supported by the National Basic Research Program of China (973 Program) “2007CB613403” and Foundation of the scientific research base development (Engineering Research Center of the Education Ministry for the Surface and Structure Modification of Inorganic functional Materials) “KYJD09014.” The authors also thank for the financial support from the UoN-ZJU partnership grant joint project (9201030000106001) and Key Science and Technology Innovation Team of Zhejiang Province (2010R50013).

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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Xudong Cheng
    • 1
  • Juncao Bian
    • 1
  • Zhengfeng Huang
    • 1
  • Zhaoguo Zhang
    • 1
  • Peimei Dong
    • 1
  • Qingli Wang
    • 1
  • Yi Chen
    • 1
  • Yanzhao Zhang
    • 1
  • Xiwen Zhang
    • 1
    Email author
  1. 1.State Key Laboratory of Silicon Materials and Department of Materials Science and EngineeringZhejiang UniversityHangzhouChina

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