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Polarization-Insensitive Metal–Semiconductor–Metal Nanoplasmonic Structures for Ultrafast Ultraviolet Detectors

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Abstract

We propose a theoretical design principle of polarization-insensitive metal–semiconductor–metal (MSM) structure for ultraviolet photodetectors based on one-dimensional nanogratings. Because the Fabry–Pérot cavity modes supported by a 100-nm-thick ZnO layer with nanostructures for transverse electric and transverse magnetic polarized incidence overlap with each other, a polarization-insensitive absorption enhancement for the ZnO layer at UV wavelengths is achieved, which can be implemented as a nano-interdigitated electrode to address a long-existing limitation between the speed and the responsivity for conventional MSM photodetectors.

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Acknowledgments

H. Hu and Q. Gan are supported by NSF (Award # ECCS 1128086). S. Jiang is supported by NSFC (Award # 51001029).

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Authors and Affiliations

  1. Department of Electrical Engineering, The State University of New York at Buffalo, Buffalo, NY, 14260, USA

    Haifeng Hu, Xie Zeng, Chong Tong, Wayne A. Anderson & Qiaoqiang Gan

  2. Semiconductor Research and Development Center, IBM Essex Junction, Burlington, VT, 05452, USA

    Jie Deng

  3. Department of Materials Science, Fudan University, Shanghai, 200433, China

    Suhua Jiang

Authors
  1. Haifeng Hu
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  2. Xie Zeng
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  3. Chong Tong
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  4. Wayne A. Anderson
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  5. Qiaoqiang Gan
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  6. Jie Deng
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  7. Suhua Jiang
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Correspondence to Qiaoqiang Gan.

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Hu, H., Zeng, X., Tong, C. et al. Polarization-Insensitive Metal–Semiconductor–Metal Nanoplasmonic Structures for Ultrafast Ultraviolet Detectors. Plasmonics 8, 239–247 (2013). https://doi.org/10.1007/s11468-012-9381-1

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  • DOI: https://doi.org/10.1007/s11468-012-9381-1

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