Abstract
We theoretically studied the exciton geometric structure in layered semiconducting transition metal dichalcogenides. Based on a three-orbital tight-binding model for Bloch electrons which incorporates their geometric structures, an effective exciton Hamiltonian is constructed and solved perturbatively to reveal the relation between the exciton and its electron/hole constituent. We show that the electron—hole Coulomb interaction gives rise to a non-trivial inheritance of the exciton geometric structure from Bloch electrons, which manifests as a valley-dependent center-of-mass anomalous Hall velocity of the exciton when two external fields are applied on the electron and hole constituents, respectively. The obtained center-of-mass anomalous velocity is found to exhibit a non-trivial dependence on the fields, as well as the wave function and valley index of the exciton. These findings can serve as a general guide for the field-control of the valley-dependent exciton transport, enabling the design of novel quantum optoelectronic and valleytronic devices.
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Acknowledgements
H. Y. acknowledges the support by the National Natural Science Foundation of China (Grant No. 12274477) and the Department of Science and Technology of Guangdong Province (No. 2019QN01X061).
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Tang, J., Wang, S. & Yu, H. Inheritance of the exciton geometric structure from Bloch electrons in two-dimensional layered semiconductors. Front. Phys. 19, 43210 (2024). https://doi.org/10.1007/s11467-023-1386-z
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DOI: https://doi.org/10.1007/s11467-023-1386-z