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Recent advances in halide perovskite memristors: From materials to applications

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Abstract

With the emergence of the Internet of Things (IoT) and the rapid growth of big data generated by edge devices, there has been a growing need for electronic devices that are capable of processing and transmitting data at low power and high speeds. Traditional Complementary Metal-Oxide-Semiconductor (CMOS) devices are nonvolatile and often limited by their ability for certain IoT applications due to their unnecessary power consumption for data movement in von Neuman architecture-based systems. This has led to a surge in research and development efforts aimed at creating innovative electronic components and systems that can overcome these shortcomings and meet the evolving needs of the information era, which share features such as improved energy efficiency, higher processing speeds, and increased functionality. Memristors are a novel type of electronic device that has the potential to break down the barrier between storage and computing. By storing data and processing information within the same device, memristors can minimize the need for data movement, which allows for faster processing speeds and reduced energy consumption. To further improve the energy efficiency and reliability of memristors, there has been a growing trend toward diversifying the selection of dielectric materials used in memristors. Halide perovskites (HPs) have unique electrical and optical properties, including ion migration, charge trapping effect caused by intrinsic defects, excellent optical absorption efficiency, and high charge mobility, which makes them highly promising in applications of memristors. In this paper, we provide a comprehensive overview of the recent development in resistive switching behaviors of HPs and the underlying mechanisms. Furthermore, we summarize the diverse range of HPs, their respective performance metrics, as well as their applications in various fields. Finally, we critically evaluate the current bottlenecks and possible opportunities in the future research of HP memristors.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 61974090, 62111540271, and 62104267) and the National Key R&D Program of China (Grant No. 2022YFB4700102).

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Authors and Affiliations

  1. Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China

    Sixian Liu, Jianmin Zeng & Gang Liu

  2. Aerospace Science & Industry Shenzhen (Group) Co. Ltd., Shenzhen, 518000, China

    Qilai Chen

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Liu, S., Zeng, J., Chen, Q. et al. Recent advances in halide perovskite memristors: From materials to applications. Front. Phys. 19, 23501 (2024). https://doi.org/10.1007/s11467-023-1344-9

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