Frontiers of Physics

, 12:127209 | Cite as

Two-carrier transport in SrMnBi2 thin films

Open Access
Research article
Part of the following topical collections:
  1. Recent Progress on Weyl Semimetals


Monocrystalline SrMnBi2 thin films were grown by molecular beam epitaxy (MBE), and their transport properties were investigated. A high and unsaturated linear magnetoresistance (MR) was observed, which exhibited a transition from a semi-classical weak-field B 2 dependence to a high-field linear dependence. An unusual nonlinear Hall resistance was also observed because of the anisotropic Dirac fermions. The two-carrier model was adopted to analyze the unusual Hall resistance quantitatively. The fitting results yielded carrier densities and mobilities of 3:75 × 1014 cm-2 and 850 cm2·V-1·s-1, respectively, for holes, and 1.468 × 1013 cm2, 4118 cm2×V-1·s-1, respectively, for electrons, with a hole-dominant conduction at 2.5 K. Hence, an effective mobility can be achieved, which is in reasonable agreement with the effective hole mobility of 1800 cm2×V-1×s-1, extracted from the MR. Further, the angle-dependent MR, proportional to cos θ, where θ is the angle between the external magnetic field and the perpendicular orientation of the sample plane, also implies a high anisotropy of the Fermi surface. Our results about SrMnBi2 thin films, as one of a new class of AEMnBi2 and AEMnSb2 (AE = Ca, Sr, Ba, Yb, Eu) materials, suggest that they have a lot of exotic transport properties to be investigated, and that their high mobility might facilitate electronic device applications.


SrMnBi2 thin films magnetoresistance two carriers anisotropic Dirac fermions 


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© The Author(s) 2016

Open Access This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited.

Authors and Affiliations

  • Xiao Yan
    • 1
  • Cheng Zhang
    • 2
    • 3
  • Shan-Shan Liu
    • 2
    • 3
  • Yan-Wen Liu
    • 2
    • 3
  • David Wei Zhang
    • 1
  • Fa-Xian Xiu
    • 2
    • 3
  • Peng Zhou
    • 1
  1. 1.State Key Laboratory of ASIC and System, School of MicroelectronicsFudan UniversityShanghaiChina
  2. 2.State Key Laboratory of Surface Physics and Department of PhysicsFudan UniversityShanghaiChina
  3. 3.Collaborative Innovation Center of Advanced MicrostructuresNanjingChina

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